Stmicroelectronics S.r.l.

Mario Micciche′

Antonino Conte

Alfredo Signorello

Rosario Roberto Grasso

SantiNunzioAntonino Pagano

Alberto José Di Martino

A sense structure may include sense amplifiers each having measuring and reference terminals for receiving a measuring and a reference current, respectively, output circuitry for providing an output voltage based upon the measuring and reference currents, and voltage regulating circuitry in cascode configuration for regulating a voltage at the measuring and reference terminals. The regulating circuitry may include measuring and regulating transistors and a reference regulating transistor having a first conduction terminal coupled with the measuring terminal and with the reference terminal, respectively, a second conduction terminal coupled with the output circuitry and a control terminal coupled with a biasing terminal. Biasing circuitry is for providing a biasing voltage to the biasing terminal, and common regulating circuitry is for regulating the biasing voltage. Each sense amplifier may also include local regulating circuitry for regulating the biasing voltage applied to the biasing terminal.

Sense structure based on multiple sense amplifiers with local regulation of a biasing voltage

An embodiment of a circuit is described for the generation of a temperature-compensated voltage reference of the type comprising at least one generator circuit of a band-gap voltage, inserted between a first and a second voltage reference and including an operational amplifier, having in turn a first and a second input terminal connected to an input stage connected to these first and second input terminal and comprising at least one pair of a first and a second bipolar transistor for the generation of a first voltage component proportional to the temperature. The circuit also comprises the control block connected to the generator circuit of a band-gap voltage in correspondence with at least one first control node which is supplied with a biasing voltage value comprising at least one voltage component which increases with the temperature for compensating the variations of the base-emitter voltage of the first and second bipolar transistors and ensure the turn-on of a pair of input transistors of the operational amplifier. The circuit has an output terminal suitable for supplying a temperature-compensated voltage value obtained by the sum of the first voltage component proportional to the temperature and of a second component inversely proportional to the temperature.

Circuit for generating a temperature-compensated voltage reference, in particular for applications with supply voltages lower than 1V

A memory device formed by an array of memory cells extending in rows and columns. The device is formed by a plurality of N-type wells extending parallel to the rows; each N-type well houses a plurality of P-type wells extending in a direction transverse to the rows. A plurality of main bitlines extend along the columns. Each P-type well is associated to a set of local bitlines that extend along the respective P-type well and are coupled to the drain terminals of the cells accommodated in the respective P-type well. Local-bitlines managing circuits are provided for each P-type well and are located between the main bitlines and a respective set of local bitlines for controllably connecting each local bitline to a respective main bitline.

Growing community of inventors

Agrigento, Italy

Mario Micciche′