Freescale Semiconductor,inc.

Nxp Usa, Inc.

Cree Gmbh

Mario M Bokatius

Joseph Staudinger

Paul Richard Hart

Richard Emil Sweeney

Abdulrhman M S Ahmed

Jeffrey Kevin Jones

Joseph Gerard Schultz

Enver Krvavac

Yu-Ting David Wu

David Paul Lester

Basim H Noori

Nick Yang

Lakshminarayan Viswanathan

Lionel Mongin

Damon G Holmes

Elie A Maalouf

Michael E Watts

Lei Zhao

Pierre Marie Jean Piel

Ricardo Uscola

Brian W Condie

Justin Nelson Annes

Pierre-Marie J Piel

Jangheon Kim

Peter H Aaen

Shishir Ramasare Shukla

Sonoko Aristud

Pierre Marie J Piel

Abdulrhman Ms Ahmed

Viswanathan Lakshminarayan

Pierre Marie Piel

Abdulrhman Ahmed

In a Doherty amplifier, outputs of first (main) and second (peak) transistors are connected by a combined impedance inverter and harmonic termination circuit. The harmonic termination circuit incorporates a predetermined part of the impedance inverter, and provides a harmonic load impedance at a targeted harmonic frequency (e.g., the second harmonic). Control of the amplitude and phase of the harmonic load impedance facilitates shaping of the drain current and voltage waveforms to maximize gain and efficiency, while maintaining a good load modulation at a fundamental frequency. Particularly for Group III nitride semiconductors, such as GaN, both harmonic control and output impedance matching circuits may be eliminated from the outputs of each transistor. The combined impedance inverter and harmonic termination circuit reduces the amplifier circuit footprint, for high integration and low power consumption.

Doherty amplifier circuit with integrated harmonic termination

In a transistor formed on a semiconductor die mounted on a substrate, where the transistor output is connected to a circuit on the substrate, a bond pad electrically connected to a transistor drain finger manifold extends less than the full length of the manifold. By controlling the length of the bond pad, the parasitic capacitance it contributes may be controlled. In applications such as a Doherty amplifier, this parasitic capacitance forms part of the quarter-wave transmission line of an impedance inverter, and hence directly impacts amplifier performance. In particular, by reducing the parasitic capacitance contribution from transistor output bond pads, the bandwidth of a Doherty amplifier circuit may be improved. At GHz frequencies and with state of the art transistor device feature sizes, concerns about phase mismatch between drain finger outputs are largely moot.

Reduced-length bond pads for broadband power amplifiers

Embodiments of circuits for use with an amplifier that includes multiple amplifier paths include a first circuit and a second circuit in parallel with the first circuit. The first circuit includes a first input coupled to a first power divider output, a first output coupled to a first amplifier path of the multiple amplifier paths, and a first adjustable phase shifter and a first attenuator series coupled between the first input and the first output. The second circuit includes a second input coupled to a second power divider output, a second output coupled to a second amplifier path of the multiple amplifier paths, and a second adjustable phase shifter coupled between the second input and the second output.

Phase shift and attenuation circuits for use with multiple-path amplifiers

A Doherty amplifier module includes first and second amplifier die. The first amplifier die includes one or more first power transistors configured to amplify, along a first signal path, a first input RF signal to produce an amplified first RF signal. The second amplifier die includes one or more second power transistors configured to amplify, along a second signal path, a second input RF signal to produce an amplified second RF signal. A phase shift and impedance inversion element is coupled between the outputs of the first and second amplifier die. A shunt circuit is coupled to the output of either or both of the first and/or second amplifier die. The shunt circuit includes a series coupled inductance and high-Q capacitor (e.g., a metal-insulator-metal (MIM) capacitor), and the shunt circuit is configured to at least partially resonate out the output capacitance of the amplifier die to which it is connected.

Amplifiers and amplifier modules with shunt inductance circuits that include high-Q capacitors

A multiple-stage amplifier includes a driver stage die and a final stage die. The final stage die includes a III-V semiconductor substrate (e.g., a GaN substrate) and a first transistor. The driver stage die includes another type of semiconductor substrate (e.g., a silicon substrate), a second transistor, and one or more secondary circuits that are electrically coupled to a control terminal of the first transistor. A connection (e.g., a wirebond array or other DC-coupled connection) is electrically coupled between an RF signal output terminal of the driver stage die and an RF signal input terminal of the final stage die. The secondary circuit(s) of the driver stage die include a final stage bias circuit and/or a final stage harmonic control circuit, which are electrically connected to the final stage die through various connections.

Multiple-stage power amplifiers implemented with multiple semiconductor technologies

The present disclosure presents a device and method for connecting an RF generator to a coaxial conductor. The device includes a substrate, a radio frequency generator on the substrate, and a coaxial conductor coupled to a first surface of the substrate. The coaxial conductor includes a conductive core and a conductive shield around the conductive core and is configured to transmit the radio frequency signal to a radiation device. The device includes a cap coupled to the substrate and extending from a second surface of the substrate opposite the first surface. The cap includes an outer wall and a center post. The outer wall is electrically connected to the conductive shield of the coaxial conductor and the center post is electrically connected to the conductive core of the coaxial conductor. An output pad of the radio frequency generator is electrically connected to the conductive core.

Device and method for connecting an RF generator to a coaxial conductor

An embodiment of a plasma ignition system for an internal combustion engine having up to N cylinders includes a power splitter, N phase shifters, N amplifiers, a power combiner network, and up to N radiation devices. The power splitter divides an input RF signal into N divided RF signals. Each phase shifter applies one of multiple pre-determined phase shifts to one of the N divided RF signals to produce N phase shifted RF signals. The N amplifiers amplify the N phase shifted RF signals to produce N amplified, phase shifted RF signals. The power combiner network combines the N amplified, phase shifted RF signals to produce N output RF signals. Each of the radiation devices receives one of the N output RF signals, and produces a plasma discharge when a power level of the output RF signal is sufficiently high.

RF power amplification and distribution systems, plasma ignition systems, and methods of operation therefor

A radiation device and related method are presented. The radiation device includes a body. The body includes a threaded portion configured to engage with a threaded opening in an engine and an open interior volume. The radiation device includes a ground electrode coupled to the body, a substrate disposed within the open interior volume in the body, and a radio frequency generator on the substrate. The radio frequency generator is configured to receive an input signal and, in response to the input signal, generate plasma energy between the body and the ground electrode.

Radiation devices

Embodiments of circuits for use with an amplifier that includes multiple amplifier paths include a first series circuit and a second series circuit in parallel with the first series circuit. The first series circuit includes a first input coupled to a first power divider output, a first output coupled to a first amplifier path of the multiple amplifier paths, and a first adjustable phase shifter and a first adjustable attenuator series coupled between the first input and the first output. The second series circuit includes a second input coupled to a second power divider output, a second output coupled to a second amplifier path of the multiple amplifier paths, and a second adjustable phase shifter and a second adjustable attenuator series coupled between the second input and the second output.

Apparatus, systems, and fabrication methods are provided for biasing amplifier arrangements inside device packages to a target quiescent current. In one embodiment, an amplifier device has an output interface and includes an amplifier arrangement having an amplifier output and impedance matching circuitry coupled between the amplifier output and the output interface. A method for biasing the amplifier arrangement involves measuring or otherwise obtaining a voltage between the amplifier output and the output interface, determining an estimated quiescent current through the amplifier arrangement based on that voltage, and adjusting a bias voltage provided to the input of the amplifier arrangement based on a difference between the estimated quiescent current. In exemplary embodiments, the bias voltage is adjusted until the estimated quiescent current is substantially equal to a target quiescent current.

Quiescent current determination using in-package voltage measurements

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Tempe, AZ, United States of America

Mario M Bokatius