Basf Se Corporation

Mario Brands

Yuzhuo Li

Vijay Immanuel Raman

Ilshat Gubaydullin

Sophia Ebert

Frank Rosowski

Andreas Keller

Yongqing Lan

Maxim Peretolchin

Thomas Scheibel

Marcus Fehr

Andrey Karpov

Thomas Gottschalk

Daniel Huemmerich

Burghard Liebmann

Lutz End

Daniel Hümmerich

Kenneth Rushing

Christian Köpsel

Robert Engel

Philipp Zacharias

Christine Schmitt

Wolf Pelletier

Ingrid Martin

Karpagavalli Ramji

Dieter Feuerstein

Jesper Feldthusen Jensen

Arne Ptock

A process for removing a bulk material layer from a substrate and planarizing the exposed surface by CMP by (1) providing an CMP agent exhibiting at the end of the chemical mechanical polishing, without the addition of supplementary materials, the same SER as at its start and a lower MRR than at its start, &#x2014;an SER which is lower than the initial SER and an MRR which is the same or essentially the same as the initial MRR or a lower SER and a lower MRR than at its start; (2) contacting the surface of the bulk material layer with the CMP agent; (3) the CMP of the bulk material layer with the CMP agent; and (4) continuing the CMP until all material residuals are removed from the exposed surface; and a CMP agent and their use for manufacturing electrical and optical devices.

Process for removing a bulk material layer from a substrate and a chemical mechanical polishing agent suitable for this process

An aqueous chemical mechanical polishing (CMP) agent (A) comprising solid particles (a1) containing (a11) a corrosion inhibitor for metals, and (a12) a solid material, the said solid particles (a1) being finely dispersed in the aqueous phase; and its use in a process for removing a bulk material layer from the surface of a substrate and planarizing the exposed surface by chemical mechanical polishing until all material residuals are removed from the exposed surface, wherein the CMP agent exhibits at the end of the chemical mechanical polishing, without the addition of supplementary materials, &#x2014;the same or essentially the same static etch rate (SER) as at its start and a lower material removal rate (MRR) than at its start, &#x2014;a lower SER than at its start and the same or essentially the same MRR as at its start or&#x2014;a lower SER and a lower MRR than at its start; such that the CMP agent exhibits a soft landing behavior.

An aqueous polishing agent, comprising, as the abrasive, at least one kind of polymer particles (A) finely dispersed in the aqueous phase and having at their surface a plurality of at least one kind of functional groups (a1) capable of interacting with the metals and/or the metal oxides on top of the surfaces to be polished and forming complexes with the said metals and metal cations, the said polymer particles (A) being preparable by the emulsion or suspension polymerization of at least one monomer containing at least one radically polymerizable double bond in the presence of at least one oligomer or polymer containing a plurality of functional groups (a1); graft copolymers preparable by the emulsion or suspension polymerization of at least one monomer containing at least one radically polymerizable double bond in the presence of at least one oligomeric or polymeric aminotriazine-polyamine condensate; and a process for the chemical and mechanical polishing of patterned and unstructured metal surfaces making use of the said aqueous polishing agent.

Aqueous polishing agent and graft copolymers and their use in a process for polishing patterned and unstructured metal surfaces

A chemical mechanical polishing (CMP) composition comprising a specific heteropolyacid Abstract A chemical-mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture thereof, (B) a heteropolyacid of the formula HaXbPsMOyVzOc wherein X=any cation other than H 8&#x3c;y&#x3c;18 8&#x3c;z&#x3c;14 56&#x3c;c&#x3c;105 a+b=2c&#x2212;6y&#x2212;5(3+z) b&#x3e;0 and a&#x3e;0 (formula I) or a salt thereof, and, (C) an aqueous medium.

Chemical mechanical polishing (CMP) composition comprising a specific heteropolyacid

An aqueous CMP agent, comprising (A) solid polymer particles interacting and forming strong complexes with the metal of the surfaces to be polished; (B) a dissolved organic non-polymeric compound interacting and forming strong, water-soluble complexes with the metal and causing an increase of the material removal rate MRR and the static etch rate SER with increasing concentration of the compound (B); and (C) a dissolved organic non-polymeric compound interacting and forming slightly soluble or insoluble complexes with the metal, which complexes are capable of being adsorbed by the metal surfaces, and causing a lower increase of the MRR than the compound (B) and a lower increase of the SER than the compound (B) or no increase of the SER with increasing concentration of the compound (C); a CMP process comprising selecting the components (A) to (C) and the use of the CMP agent and process for polishing wafers with ICs.

Aqueous polishing agent comprising solid polymer particles and two complexing agents and its use in a process for polishing patterned and unstructured metal surfaces

(A) solid polymer particles being finely dispersed in the aqueous phase and containing pendant functional groups (a1) capable of strongly interacting and forming strong complexes with the metal of the surfaces to be polished, and pendant functional groups (a2) capable of interacting less strongly with the metal of the surfaces to be polished than the functional groups (a1); and (B) an organic non-polymeric compound dissolved in the aqueous phase and capable of interacting and forming strong, water-soluble complexes with the metal of the surfaces to be polished and causing an increase of the material removal rate MRR and the static etch rate SER of the metal surfaces to be polished with increasing concentration of the compound (B); a CMP process comprising selecting (A) and (B) and the use of the CMP agent and process for polishing wafers with ICs.

Aqueous metal polishing agent comprising a polymeric abrasiv containing pendant functional groups and its use in a CMP process

The invention relates to the use of amphiphilic self-assembling proteins for formulating poorly water-soluble effect substances.

Use of amphiphilic self-assembling proteins for formulating poorly water-soluble effect substances

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Ludwigshafen, Germany

Mario Brands