Macom Technology Solutions Holdings, Inc.

Wolfspeed, Inc.

Mario Bokatius

Michael E Watts

Basim H Noori

Marvin Marbell

Qianli Mu

Kwangmo Chris Lim

Jangheon Kim

James Krehbiel

RF transistor amplifiers include a Group III nitride-based RF transistor amplifier die that includes a semiconductor layer structure, a conductive source via that is connected to a source region of the Group III nitride-based RF transistor amplifier die, the conductive source via extending through the semiconductor layer structure, and an additional conductive via that extends through the semiconductor layer structure. A first end of the additional conductive via is connected to a first external circuit and a second end of the additional conductive via that is opposite the first end is connected to a first matching circuit.

Group III nitride-based radio frequency transistor amplifiers having source, gate and/or drain conductive vias

A semiconductor device package includes a first and a second input lead and a plurality of uniform transistor-based components, the plurality of uniform transistor-based components comprising a first subset of the uniform transistor-based components coupled to the first input lead and a second subset of the uniform transistor-based components coupled to the second input lead. The first subset and the second subset are arranged in an asymmetric configuration with respect to one another.

Device packages with uniform components and methods of forming the same

RF amplifiers are provided that include an interconnection structure and a Group III nitride-based RF amplifier die that is mounted on top of the interconnection structure. The Group III nitride-based RF amplifier die includes a semiconductor layer structure. A plurality of unit cell transistors are provided in an upper portion of the semiconductor layer structure, and a gate terminal, a drain terminal and a source terminal are provided on a lower surface of the semiconductor layer structure that is adjacent the interconnection structure.

Group III nitride-based radio frequency amplifiers having back side source, gate and/or drain terminals

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Chandler, AZ, United States of America

Mario Bokatius