International Business Machines Corporation

Tokyo Electron Limited

Massachusetts Institute of Technology

Marinus Johannes Petrus Hopstaken

Devendra K Sadana

Hongwen Yan

Takashi Ando

Steven J Holmes

Oleg Gluschenkov

Kevin K Chan

Hariklia Deligianni

Lubomyr Taras Romankiw

Yu Zhu

Hiroyuki Miyazoe

William Joseph Gallagher

Martin O Sandberg

Sebastian Ulrich Engelmann

Ko-Tao Lee

Tomas Apostol Palacios

Qingyun Yang

Lian Guo

Daniel Piedra

Yasir Sulehria

Maurice Mason

Devi Koty

Christopher Scerbo

A Josephson Junction qubit device is provided. The device includes a substrate of silicon material. The device includes first and second electrodes of superconducting metal. The device may include a nanowire created by direct ion implantation on to the silicon material to connect the first and second electrodes. The device may include first and second superconducting regions created by direct ion implantation on to the silicon material, the first superconducting region connecting the first electrode and the second superconducting region connecting the second electrode, with a silicon channel formed by a gap between the first and second superconducting regions.

Josephson junction device fabricated by direct write ion implantation

Embodiments of process flows and methods are provided for forming a resistive switching random access memory (ReRAM). More specifically, process flows and methods are provided for reducing the forming voltage needed to form a conductive path in the ReRAM cells. A wide variety of plasma doping processes are used to introduce a plurality of different dopants into a metal-oxide dielectric film. By utilizing at least two different dopants, the plasma doping processes described herein reduce the forming voltage of the subsequently formed ReRAM cell compared to conventional processes that use only one dopant. In some embodiments, the forming voltage may be further reduced by applying a bias power during the plasma doping process, wherein the bias power is preselected to increase the number of ions introduced into the metal-oxide dielectric film during the plasma doping process.

Plasma co-doping to reduce the forming voltage in resistive random access memory (ReRAM) devices

After forming source/drain contact openings to expose portions of source/drain regions composed of an n-doped III-V compound semiconductor material, surfaces of the exposed portions of the source/drain regions are cleaned to remove native oxides and doped with plasma-generated n-type dopant radicals. Semiconductor caps are formed in-situ on the cleaned surfaces of the source/drain regions, and subsequently converted into metal semiconductor alloy regions. Source/drain contacts are then formed on the metal semiconductor alloy regions and within the source/drain contact openings.

Self-aligned trench metal-alloying for III-V nFETs

A GaN device is formed on a semiconductor substrate having a plurality of recessed regions formed in a surface thereof. A seed layer, optional buffer layer, and gallium nitride layer such as a carbon-doped gallium nitride layer are successively deposited within the recessed regions. Improved current collapse response of the GaN device is attributed to maximum length and width dimensions of the multilayer stack.

Control of current collapse in thin patterned GaN

A method of fabricating a flexible photovoltaic film cell with an iron diffusion barrier layer. The method includes: providing a foil substrate including iron; forming an iron diffusion barrier layer on the foil substrate, where the iron diffusion barrier layer prevents the iron from diffusing; forming an electrode layer on the iron diffusion barrier layer; and forming at least one light absorber layer on the electrode layer. A flexible photovoltaic film cell is also provided, which cell includes: a foil substrate including iron; an iron diffusion barrier layer formed on the foil substrate to prevent the iron from diffusing; an electrode layer formed on the iron diffusion barrier layer; and at least one light absorber layer formed on the electrode layer.

Method of fabricating a flexible photovoltaic film cell with an iron diffusion barrier layer

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Carmel, NY, United States of America

Marinus Johannes Petrus Hopstaken