Asml Netherlands B.v.

Asm Lithography B.v.

Asm Lithography

U.S. Philips Corporation

Marinus Aart Van Den Brink

Jozef Petrus Henricus Benschop

Erik Roelof Loopstra

Johannes Catharinus Hubertus Mulkens

Coen Adrianus Verschuren

Erwin Paul Smakman

Bernardo Kastrup

Tamara Druzhinina

Stefan Wittekoek

Yu Long Cao

Yi Zou

Edwin Cornelis Kadijk

Henk F Linders

Hans Butler

Martinus Hendrikus Antonius Leenders

Joost Jeroen Ottens

Johannes Henricus Wilhelmus Jacobs

Engelbertus Antonius Fransiscus Van Der Pasch

Alexander Straaijer

Koen Jacobus Johannes Maria Zaal

Franciscus Johannes Joseph Janssen

Frits Van Der Meulen

Jan Bernard Plechelmus Van Schoot

Marc Wilhelmus Maria Van Der Wijst

Jan Van Eijk

Emiel Jozef Melanie Eussen

Leon Martin Levasier

Frederik Eduard De Jong

Antonius Theodorus Wilhelmus Kempen

Marcel Hendrikus Maria Beems

Oscar Franciscus Jozephus Noordman

Jan E Van Der Werf

Jan Cornelis Van Der Hoeven

Marcel Johannus Elisabeth Hubertus Muitjens

Johannes Wilhelmus De Klerk

Peter Franciscus Wanten

Nicolas Alban Lallemant

Johannes C Mulkens

Johannes M Van Kimmenade

Richard Alexander George

David Lucien Anstotz

Renatus Gerardus Klaver

Hubert Matthieu Richard Steijns

Martijn Robert Hamers

Johannes C M Jasper

Harm Roelof Rossing

Johannes Cm Jasper

Johannes Paul Marie De La Rosette

Marteijn De Jong

Boudewijn Theodorus Verhaar

Peter Hoekstra

André Gillis Van De Velde

Jan Liefooghe

Johannes C H Mulkens

Georgo Angelis

Theodorus A Fahner

Richard Bernardus Johannes Droste

Johannes M Beltman

Markus Rolf Werner Matthes

Hubert A Neilen

Joezf Petrus Henricus Benschop

An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns, the actuator system including a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.

Method and apparatus for inspection

A lithographic system comprises a radiation source and a lithographic apparatus. The radiation source provides radiation to the lithographic apparatus. The lithographic apparatus uses the radiation for imaging a pattern onto multiple target areas on a layer of photo-resist on a semiconductor substrate. The imaging requires a pre-determined dose of radiation. The system is controlled so as to set a level of a power of the radiation in dependence on a magnitude of the pre-determined dose.

Method for controlling a lithographic system

A method for calibrating a process model and training an inverse process model of a patterning process. The training method includes obtaining a first patterning device pattern from simulation of an inverse lithographic process that predicts a patterning device pattern based on a wafer target layout, receiving wafer data corresponding to a wafer exposed using the first patterning device pattern, and training an inverse process model configured to predict a second patterning device pattern using the wafer data related to the exposed wafer and the first patterning device pattern.

Machine learning based inverse optical proximity correction and process model calibration

An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns. The actuator system may include a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.

The invention relates to a dual stage lithographic apparatus, wherein two substrate stages are constructed and arranged for mutual cooperation in order to perform a joint scan movement. The joint scan movement brings the lithographic apparatus from a first configuration, wherein immersion liquid is confined between a first substrate held by the first stage of the stages and a projection system of the apparatus, to a second configuration, wherein the immersion liquid is confined between a second substrate held by the second stage of the two stages and the projection system, such that during the joint scan movement the liquid is essentially confined within the space with respect to the projection system.

Dual stage lithographic apparatus and device manufacturing method

A lithographic apparatus comprising an illumination system configured to condition a radiation beam, a support structure constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, a substrate table constructed to hold a substrate, and a projection system configured to project the patterned radiation beam onto the substrate, the lithographic apparatus being provided with a first cooling fluid circuit which is configured to cool components to a first temperature, and provided with a second cooling fluid circuit which is configured to cool components to a second temperature that is lower than the first temperature.

Lithographic apparatus

An immersion lithographic apparatus is described with a drain configured to remove liquid from a gap between an edge of the substrate and the substrate table on which the substrate is supported. The drain is provided with a means to provide liquid to the drain irrespective of the position of the substrate table and/or a means to saturate gas within the drain. Those measures reduce the variations in heat load due to evaporation of liquid in the drain.

Lithographic apparatus and device manufacturing method

In an embodiment, a stage system calibration method includes moving the stage relative to an encoder grid in response to a setpoint signal and measuring a position of the stage by a sensor head cooperating with the encoder grid. The position of the stage is controlled by a stage controller. A signal representative of a difference between the setpoint signal and the position of the stage as measured by the sensor head is registered. The stage system is calibrated from the registered signal representative of the difference.

Lithographic apparatus and calibration method

A detector detects liquid in the path of a projection beam or alignment beam. A controller then determines which one or more of a plurality of compensating optical elements may be provided in the optical path of the projection beam or alignment beam in order to focus the projection beam or alignment beam on the surface of the substrate. The appropriate optical element may be placed in the path of the projection beam or alignment beam directly as a final element of the projection system or alignment system respectively.

Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus

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Moergestel, Netherlands

Marinus Aart Van Den Brink