Kabushiki Kaisha Toshiba

Mariko Takagi

Ichiro Yoshii

Katsura Miyashita

Hisao Yoshimura

Naoki Ikeda

Kaoru Hama

Hiroaki Yasuda

Ichiro Mizushima

The present invention provides a semiconductor device, comprising a semiconductor substrate, a gate insulating film formed on the semiconductor substrate, a gate electrode formed on the gate insulating film, and source-drain diffusion layer formed within the semiconductor substrate in the vicinity of the gate electrode. A silicide film is formed on each of the gate electrode and the source-drain diffusion layer. The silicide film positioned on the gate electrode is thicker than the silicide film positioned on the source-drain diffusion layer. The present invention also provides a method of manufacturing a semiconductor device, in which a gate electrode is formed on a gate insulating film covering a semiconductor substrate, followed by forming a source-drain diffusion layer within the semiconductor substrate. Then, atoms inhibiting a silicidation are selectively introduced into the source-drain diffusion layer, followed by forming a film of a metal having a high melting point on each of the gate electrode and the source-drain diffusion layer. The film of the high melting point metal is converted into a silicide film to form silicide films selectively on the gate electrode and the source-drain diffusion layer. The particular method permits retarding the formation of the silicide film on the source-drain diffusion layer so as to make it possible to obtain a semiconductor device of a salicide structure in which the silicide film formed on the gate electrode is thicker than the silicide film formed on the source-drain diffusion layer.

Semiconductor device comprising metal silicide films formed to cover gate electrode and source-drain diffusion layers and method of manufacturing the same

The invention provides a semiconductor device, and a manufacturing method, comprising a semiconductor substrate, a gate insulating film, a gate electrode, and a source-drain diffusion layer. A silicide film is formed on the gate electrode and the source-drain diffusion layer. The silicide film is thicker on the gate electrode than on the source-drain diffusion layer. The manufacturing method comprises forming a gate electrode on a gate insulating film, followed by forming a source-drain diffusion layer. Then, atoms inhibiting a silicidation are selectively introduced into the source-drain diffusion layer, and a high melting point metal film is formed on the gate electrode and the source-drain diffusion layer. The high melting point metal film is converted into silicide films selectively on the gate electrode and the source-drain diffusion layer. The method permits retarding the formation of the silicide film on the source-drain diffusion layer to obtain a semiconductor device in which the silicide film on the gate electrode is thicker than the silicide film on the source-drain diffusion layer.

SEMICONDUCTOR DEVICE COMPRISING METAL SILICIDE FILMS FORMED TO COVER GATE ELECTRODE AND SOURCE-DRAIN DIFFUSION LAYERS AND METHOD OF MANUFACTURING THE SAME WHEREIN THE SILICIDE ON GATE IS THICKER THAN ON SOURCE-DRAIN

In A MIS type semiconductor device using a polycrystalline silicon film as a gate electrode, a lower portion of the polycrystalline silicon film has larger grains in average diameter than an upper portion thereof, and there is no peak of oxygen concentration in a film thickness direction in the polycrystalline silicon film.

MIS-type semiconductor device having a multi-portion gate electrode

In a method of manufacturing a semiconductor device, a titanium silicide layer is formed on a region of a diffusion layer formed in a semiconductor substrate. A silicon nitride film functioning as an etching stopper is formed on the semiconductor substrate. The silicon nitride film covers the layer. An interlayered insulating film is formed on the silicon nitride film. A barrier metal of Tin/Ti is formed in a contact hole, which is formed in the interlayered insulating film. The contact holes is opened toward the diffusion layer. A conductive film comprising a Ti&mdash;Si&mdash;N based alloy is formed between a metal wiring and the diffusion layer. The conductive film is formed by reacting the silicon nitride film with titanium contained in the titanium silicide layer or the barrier metal. With these manufacturing features, the manufacturing process is not increased and the manufacturing cost can be reduced.

Semiconductor apparatus and manufacturing method therefor

A first electrode layer is formed on a semiconductor substrate, and surfaces other than a top surface thereof are buried in an insulation film, and the top surface makes the same surface as that of the insulation film. An antifuse insulation film is formed on a flat surface including the top surface of the first electrode layer. A second electrode layer is formed on the antifuse insulation film. An antifuse portion is formed by self-alignment at a cross point between the first and second electrode layers.

Inter-metal-wiring antifuse device provided by self-alignment

A semi conductor device is provided having the following arrangement. A first electrode is formed on the major surface of a semiconductor substrate and comprises a first Al connection layer formed over the semiconductor substrate and a barrier metal layer provided on, and electrically connected to, the first Al connection layer and serving as a barrier against the Al. An insulating film is formed over the semiconductor substrate so as to cover the first electrode. An opening is formed in the insulating film so as to partially expose the first electrode. An antifuse film is formed in a manner to partially cover the insulating film and contact with the barrier metal layer of the first electrode with the opening therebetween. The antifuse film is formed of silicon nitride whose nitrogen/silicon atomic composition ratio ranges from 0.6 to 1.2. A second electrode is formed over the antifuse film and comprised of a barrier metal layer serving as a barrier against the Al.

Semiconductor device equipped with antifuse elements and a method for

In a semiconductor device including an anti-fuse element, a first electrode layer is formed on a semiconductor substrate. A first insulating layer is formed only on the first electrode layer for insulating the first electrode layer. An anti-fuse insulating film is coated on at least one side wall portion of each of the first electrode layer and the first insulating layer. A second electrode layer is formed on the anti-fuse insulating film, and the first and second electrode layers and the anti-fuse insulating film constitute the anti-fuse element.

Semiconductor device including anti-fuse element and method of

A programmable device uses anti-fuse elements. The device has a wiring layer on an insulator film on a semiconductor substrate, and it is programmed by connected condition of this wiring. The wiring is separated, such as a first wiring line and a second wiring line on the same plane, beforehand so has been disconnected at separated nodes. A thin insulator film is formed on the disconnection nodes at least, and a further floating electrode, consisting of an aluminum alloy, is formed on the thin insulator film, so that an anti-fuse element is formed straddling the first and the second wiring. When it is programmed, in order to change the disconnected anti-fuse element into a conductive state, a destructive electric potential difference is impressed between the first and the second wiring lines through the thin insulator film. As a result, the thin insulator film is broken, so that the first and the second wiring lines are connected with the floating electrode.

Programmable semiconductor device using anti-fuse elements with floating

A semiconductor device is provided having the following arrangement. A first electrode is formed on the major surface of a semiconductor substrate and comprises a first Al connection layer formed over the semiconductor substrate and a barrier metal layer provided on, and electrically connected to, the first Al connection layer and serving as a barrier against the Al. An insulating film is formed over the semiconductor substrate so as to cover the first electrode. An opening is formed in the insulating film so as to partially expose the first electrode. An antifuse film is formed in a manner to partially cover the insulating film and contact with the barrier metal layer of the first electrode with the opening therebetween. The antifuse film is formed of silicon nitride whose nitrogen/silicon atomic composition ratio ranges from 0.6 to 1.2. A second electrode is formed over the antifuse film and comprised of a barrier metal layer serving as a barrier against the Al.

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Kawasaki, Japan

Mariko Takagi