Kabushiki Kaisha Toshiba

Canon Kabushiki Kaisha

Yahoo Japan Corporation

Advanced Softmaterials Inc.

Mariko Suzuki

Shoji Koike

Koromo Shirota

Tadashi Sakai

Masahiro Haruta

Tomoya Yamamoto

Naoshi Sakuma

Masayuki Katagiri

Yuichi Yamazaki

Tomio Ono

Kazuhiko Itaya

Aya Takaide

Masayuki Ishikawa

Hiroaki Yoshida

Genichi Hatakoshi

Shinichi Hakamada

Aya Yoshihira

Makoto Aoki

Hiroyuki Saito

Tadayoshi Inamoto

Hiroshi Yoshino

Yoshiaki Kaburagi

Akira Kuribayashi

Ako Takemura

Hideto Sugawara

Johji Nishio

Hidetoshi Fujimoto

John Rennie

Lisa Sugiura

Hiromichi Noguchi

Yasuhiro Nito

Masaaki Onomura

Yukio Watanabe

Hideki Takayama

Shinya Nunoue

Yukie Nishikawa

Makoto Wada

Hajime Okuda

Hideo Shiozawa

Osamu Sato

Takashi Shinohe

Makoto Shioya

Yasushi Miura

Yoichi Taneya

Shoji Shiba

Akihiko Shimomura

Koichi Nitta

Takashi Sawada

Chiharu Ota

Kazuto Takao

Hisao Kamo

Masanori Ito

Tsuyoshi Santo

Hisao Miyazaki

Yuki Uchida

Yoshihiro Kokubun

Hiroshi Asakawa

Yoshiko Miyashita

Changming Zhao

Hajime Kishida

Shigeya Naritsuka

Muneyoshi Sunada

Ayaka Hirano

Christian Ruslim

Isamu Yanase

Yuichi Kitajima

Chiemi Taki

Hiroki Sasakido

Hiroshi Machida

Shintaro Sato

Yasuyuki Ishida

Satoko Ito

Hiroko Ota

Chika Watanabe

Provided is a semiconductor device according to an embodiment including an i-type or first-conductivity-type first diamond semiconductor layer having a first side surface, a second-conductivity-type second diamond semiconductor layer provided on the first diamond semiconductor layer and having a second side surface, a third diamond semiconductor layer being in contact with the first side surface and the second side surface, the third diamond semiconductor containing nitrogen, a first electrode electrically connected to the first diamond semiconductor layer, and a second electrode electrically connected to the second diamond semiconductor layer.

Semiconductor device

In one embodiment, a diamond semiconductor device includes a first diamond semiconductor layer of a first conductivity type which has a main surface, a second diamond semiconductor layer of an i-type or a second conductivity type which is provided on the main surface of the first diamond semiconductor layer, and has a first side surface with a plane orientation of a {111} plane, a third diamond semiconductor layer of the first conductivity type which is provided on the first side surface, and a fourth diamond semiconductor layer of the second conductivity type which is provided on the main surface of the first diamond semiconductor layer and on a side surface of the second diamond semiconductor layer at a side opposite to a side of the third diamond semiconductor layer.

Diamond semiconductor device

A semiconductor device according to an embodiment includes an i-type or a p-type first diamond semiconductor layer, an n-type second diamond semiconductor layer provided on the first diamond semiconductor layer, a mesa structure and an n-type first diamond semiconductor region provided on the side surface. The mesa structure includes the first diamond semiconductor layer, the second diamond semiconductor layer, a top surface with a plane orientation of &#xb1;10 degrees or less from a {100} plane, and a side surface inclined by 20 to 90 degrees with respect to a direction of &#x3c;011&#x3e;&#xb1;20 degrees from the {100} plane. The first diamond semiconductor region is in contact with the second diamond semiconductor layer and has an n-type impurity concentration lower than an n-type impurity concentration of the second diamond semiconductor layer.

Semiconductor device and method of manufacturing the same

According to one embodiment, a semiconductor device includes an n-type semiconductor layer, a first electrode, and a nitride semiconductor layer. The n-type semiconductor layer includes diamond. The nitride semiconductor layer is provided between the n-type semiconductor layer and the first electrode. The nitride semiconductor layer includes AlGaN (0&#x2266;x&#x2266;1) and is of n-type.

A graphene wiring has a substrate, a catalyst layer on the substrate, a graphene layer on the catalyst layer, and a dopant layer on a side surface of the graphene layer. An atomic or molecular species is intercalated in the graphene layer or disposed on the graphene layer.

Graphene wiring

A semiconductor device of an embodiment includes: a substrate on which a semiconductor circuit is formed; an interlayer insulating film in which a contact hole is formed on the substrate; a catalyst metal film on a side wall of the contact hole; catalyst metal particles on a bottom of the contact hole; graphene on the catalyst metal film; and carbon nanotubes, which penetrates the contact hole, on the catalyst metal particles.

A semiconductor device according to an embodiment includes: a first diamond semiconductor layer of a first conductivity type including a main surface having a first plane orientation; a trench structure formed in the first diamond semiconductor layer; a second diamond semiconductor layer formed on the first diamond semiconductor layer in the trench structure and having a lower dopant concentration than the first diamond semiconductor layer; a third diamond semiconductor layer of a second conductivity type formed on the second diamond semiconductor layer and having a higher dopant concentration than the second diamond semiconductor layer; a first electrode electrically connected to the first diamond semiconductor layer; and a second electrode electrically connected to the third diamond semiconductor layer.

A semiconductor device of an embodiment includes a p-type first diamond semiconductor layer, a p-type second diamond semiconductor layer disposed on the first diamond semiconductor layer, a plurality of n-type third diamond semiconductor layers disposed on the second diamond semiconductor layer, and a first electrode disposed on the second diamond semiconductor and the third diamond semiconductor layers. The p-type second diamond semiconductor layer has a p-type impurity concentration lower than a p-type impurity concentration of the first diamond semiconductor layer and has oxygen-terminated surfaces. Each of the third diamond semiconductor layers has an oxygen-terminated surface. The first electrode forms first junctions between the first electrode and the second diamond semiconductor. The first electrode forms second junctions between the first electrode and the third diamond semiconductor layers. The first junctions and the second junctions are Schottky junctions.

An information processing device includes a collecting unit which collects user's biological information. The information processing device includes a determining unit which determines an emotion of the user by using the biological information collected by the collecting unit. The information processing device includes an output unit which outputs in association with information representing the user and the emotion of the user determined by the determining unit to terminal devices which are used by other users.

Information processing device, control method, and a non-transitory computer readable storage medium

An information processing device includes a collecting unit that collects biological information of a first user and a second user. The information processing device includes a specifying unit that specifies an emotion of the first user toward the second user and an emotion of the second user toward the first user using the biological information acquired by the collecting unit. The information processing device includes a determining unit that determines whether or not to provide information on the second user to the first user based on respective emotions specified by the specifying unit.

Information processing device, determination method, and non-transitory computer readable storage medium

A semiconductor device according to the present embodiment includes a diamond substrate having a surface plane inclined from a (100) plane in a range of 10 degrees to 40 degrees in a direction of &#x3c;011&#x3e;&#xb1;10 degrees, and an n-type diamond semiconductor layer containing phosphorus (P) and formed above the surface plane described above.

Semiconductor device and method for manufacturing the same

A semiconductor device of an embodiment includes: a substrate; a first catalytic metal film on the substrate; graphene on the first catalytic metal film; an interlayer insulating film on the graphene; a contact hole penetrating through the interlayer insulating film; a conductive film at the bottom portion of the contact hole, the conductive film being electrically connected to the graphene; a second catalytic metal film on the conductive film, the second catalytic metal film being subjected to plasma processing with at least one kind of gas selected from hydrogen, nitrogen, ammonia, and rare gas; and carbon nanotubes on the second catalytic metal film.

In the growth of carbon nanotubes, the aggregation of catalytic fine particles therefor is a problem. In order to realize the growth of carbon nanotubes into a high density, the carbon nanotube growing process includes a first plasma treatment step of treating a surface having catalytic fine particles with a plasma species generated from a gas which contains at least hydrogen or a rare gas without carbon element, a second plasma treatment step of forming a carbon layer on the surface of the catalytic fine particles by a plasma generated from a gas which contains at least a hydrocarbon after the first plasma treatment step, and a carbon nanotube growing step of growing carbon nanotubes by use of a plasma generated from a gas which contains at least a hydrocarbon after the second plasma treatment step.

Carbon nanotube growing process, and carbon nanotube bundle formed substrate

Growing community of inventors

Yokohama, Japan

Mariko Suzuki