Mitsubishi Electric Corporation

Mariko Ono

Akira Goto

Yoshitaka Kimura

Rei Yoneyama

Ryo Goto

Akihiko Yamashita

Takehiro Araki

Takami Otsuki

Semiconductor device

A metal base substrate of the present invention includes a copper plate made of copper, a metal layer that is formed on the copper plate and is made of a metal different from the copper, an insulating resin sheet that is formed by bonding a sheet made of an insulating resin onto the metal layer, and a circuit pattern formed on the insulating resin sheet.

Metal base substrate, power module, and method for manufacturing metal base substrate

A semiconductor device includes a metal substrate, semiconductor elements, wires, a control terminal, a main electrode terminal, a control substrate, a cover, a sealing resin, a case, and an insulator. The metal substrate includes a metal plate, an insulating layer formed on the top surface of the metal plate, and electrode patterns provided on the insulating layer. The semiconductor elements are secured to different ones of the electrode patterns by solder. The sealing resin seals the components within the case, such as the semiconductor elements. The insulator covers a portion of the surface of the insulating layer and at least a portion of the edge of each electrode pattern.

Growing community of inventors

Fukuoka, Japan

Mariko Ono