Nec Electronics Corporation

Mariko Makabe

Koichi Ando

Shin Koyama

Eiji Hasegawa

An interpoly insulating film is modified in the film quality, while preventing generation of trap sites. A floating gateis provided on a channel-forming region in the vicinity of the surface of a silicon substrate, an interpoly insulating filmis provided so as to contact with the floating gate, and a control gateis provided so as to contact with the interpoly insulating filmand so as to be opposed to at least a part of the floating gate. A process step of providing the interpoly insulating filmfurther includes a step of forming on the floating gate, the interpoly insulating filmso as to contact with the floating gate, and a step of exposing, subsequently to the formation of the interpoly insulating film, the interpoly insulating filmto an atmosphere containing a nitrogen-containing gas and oxygen, to thereby simultaneously proceed nitriding and oxidation of the interpoly insulating film

Method of fabricating a non-volatile memory element including nitriding and oxidation of an insulating film

A metal oxide Semiconductor (MOS) transistor includes a gate insulating film disposed on a surface of a silicon substrate. The gate insulating film has a central portion formed on the silicon substrate and comprising a nitride insulating film, and an end portion located on each side of the central portion, the end portion being thicker than the central portion and formed of an oxide insulating film. The MOS transistor also includes a p-type gate electrode formed on the gate insulating film, sidewalls formed on both sides of the gate insulating film and the gate electrode, a pair of p-type source/drain areas formed in surface portions of the silicon substrate, and a channel area located between the pair of source/drain areas.

High-performance MOS transistor of LDD structure having a gate insulating film with a nitride central portion and oxide end portions

A Metal Oxide Semiconductor (MOS) transistor includes a gate insulating film disposed on a surface of a silicon substrate. The gate insulating film has a central portion formed on the silicon substrate and comprising a nitride insulating film, and an end portion located on each side of the central portion, the end portion being thicker than the central portion and formed of an oxide insulating film. The MOS transistor also includes a p-type gate electrode formed on the gate insulating film, sidewalls formed on both sides of the gate insulating film and the gate electrode, a pair of p-type source/drain areas formed in surface portions of the silicon substrate, and a channel area located between the pair of source/drain areas.

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Tokyo, Japan

Mariko Makabe