Ihi Corporation

Nec Corporation

Mariko Katou

Naoki Fujiwara

Shinsuke Matsuno

Kenji Takano

Atsushi Murakami

Yoshiyuki Iso

Jian Huang

Provided is a gas separation apparatus advantageous in suppression of increase in pressure loss and achievement of reduced size and weight, thereby reducing costs. The gas separation apparatus causes an absorbent to flow down along the surface of a packing arranged in a treatment chamber, and supplies to the treatment chamber a gas to be treated which contains a target gas component, and then causes the gas to be treated and the absorbent flowing down along the surface of the packing to come into gas-liquid contact. Thus the target gas component contained in the gas to be treated is absorbed into the absorbent and separated or recovered from the gas to be treated. The packing has at least one packing unit configured by a plurality of expanded metal plates standing vertically and being aligned.

Gas separation apparatus and packing

The gas separation device separates or captures a target gas component from a gas to be processed by: causing an absorbing liquid to flow down on a surface of a packing disposed inside a processing tank while supplying the gas to be processed containing the target gas component into the processing tank; bringing the absorbing liquid flowing down on the surface of the packing and the gas to be processed into gas-liquid contact; and thereby causing the absorbing liquid to absorb the target gas component contained in the gas to be processed. The packing includes at least one packing unit formed from multiple expanded metal plates, which are disposed vertically and arranged in parallel. Each expanded metal plate includes strands forming the openings which are arranged like stairs. Each strand is inclined to the vertical direction at an angle in a range from 48&#xb0; to 73&#xb0;.

Gas separation device and packing

Plating cups 2 each hold therein respective semiconductor substrates to be plated. The temperatures of the plating solution in the plating cups are controlled at optimum levels by controlling the operations of heaters 13 and 16, based on the temperature of the plating cups as measured by thermometers 5 mounted on the plating cups 2. Metal ion concentration in the solution and the pH level and specific gravity of the solution are measured by an atomic absorption spectrometer 17, a pH gauge 18, and a gravimeter 19, respectively, for determining necessary amount of replenishing metal ions and solution from a solution level regulator 21, thereby maintaining the relevant parameters of the solution within a permissible range.

Apparatus for metal plating

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Tokyo, Japan

Mariko Katou