Canon Kabushiki Kaisha

Mariko Furuta

Mitsuhiro Yomori

Yuto Nozaki

Kiyoto Murakumo

Yasuhiro Sekine

Nobutaka Ukigaya

Kyouhei Watanabe

Daisuke Shimoyama

Satoshi Hirayama

Jun Iwata

A display device includes a light emitting layer and color filter arrays. The color filter arrays comprise a first color filter array of a first color, and a second color filter array of a second color. The first color filter array comprises a first pair of color filters adjacent to each other with a first clearance therebetween and a second pair of color filters adjacent to each other with a second clearance therebetween. The second color filter array comprises a first color filter positioned between the first pair of color filters and a second color filter positioned between the second pair of color filters. A width of the first clearance is larger than a width of the second clearance. A width of the first color filter is larger than a width of the second color filter. The second color filter partially overlaps with the second pair of color filters.

Method for forming color filter array and method for manufacturing electronic device

A method for forming a color filter array includes the step of forming a first color filter array by forming a first color filter film on a surface of a base member using a coating method and by patterning the first color filter film and the step of forming a second color filter array by forming a second color filter film on the surface so as to cover the first color filter array using a coating method and by patterning the second color filter film. The color filters in the first color filter array are uneven in the width of the clearance between the color filters and/or the widths of the color filters.

A display device is provided. The device comprises light emitting elements and a protection layer. The light emitting elements include lower electrodes isolated by an insulator portion, an organic layer including a light emitting layer arranged on the lower electrodes, and an upper electrode covering the organic layer. The insulator portion includes a first portion arranged on the lower electrodes, and a second portion arranged between the lower electrodes. The protection layer covers the upper electrode, and is provided with an isolating portion that is arranged over the second portion and has a refractive index different from the protection layer. A height of an upper surface of a portion of the upper electrode arranged under the isolating portion is lower than a height of an upper surface of a portion of the upper electrode arranged over the first portion.

Display device including lower electrodes isolated by an insulator portion and method of manufacturing the same

A photomask for an optical element array includes first and second optical elements. A light transmission rate distribution includes a first area where the first optical element is to be formed, a second area where the second optical element is to be formed, and a third area between the first and second areas, has a first light transmission rate at an end portion of the first area. A second light transmission rate is higher than the first light transmission rate at another end portion. A third light transmission rate at an end portion corresponds to a boundary between the second and third areas. A fourth light transmission rate is higher than the third light transmission rate at another end portion of the second area. The light transmission rate distribution along a first direction is higher than a segment connecting the second and third light transmission rates in the third area.

Photomask, method of manufacturing optical element array, optical element array

The present invention reduces color mixture (cross talk) and the degradation of sensitivity in a peripheral region of a pixel area to achieve a reduction of sensitivity irregularity in the pixel area. A solid-state imaging apparatus having a pixel area including a plurality of photoelectric conversion elements includes: a semiconductor substrate in which the plurality of photoelectric conversion elements are formed; a plurality of air gap formed layers which are arranged above the semiconductor substrate, and correspond to the photoelectric conversion elements in the plurality of photoelectric conversion elements, respectively; and air gaps arranged between the air gap formed layers in the plurality of air gap formed layers, respectively, wherein the air gap in a peripheral region B of the pixel area has a width larger than the air gap in a central region A of the pixel area.

Solid-state imaging apparatus and method for manufacturing the same

A solid-state image sensor having a pixel region and a peripheral circuit region, includes wiring lines arranged in the pixel region and the peripheral circuit region, dummy patterns arranged in the peripheral circuit region, and a planarizing layer arranged on the wiring lines and containing a resin. The wiring lines in the peripheral circuit region include a plurality of electrically conductive patterns. The dummy patterns are arranged between the plurality of electrically conductive patterns. The dummy patterns are electrically insulated from the wiring lines.

Growing community of inventors

Yokohama, Japan

Mariko Furuta