Mitsubishi Electric Corporation

Marika Nakamura

Koichi Akiyama

Eiji Yagyu

Masahiro Yoshida

Shusaku Hayashi

Tatsuro Watahiki

Yuki Takiguchi

Hisashi Saito

Shigeyoshi Usami

A first nitride semiconductor layer and a second nitride semiconductor layer are laminated in a first direction. The first and second nitride semiconductor layers form a heterojunction, and a two-dimensional carrier gas is induced in the first nitride semiconductor layer. A drain electrode is opposite to a source electrode via gate electrode in a third direction. The source electrode and the drain electrode conduct with the first nitride semiconductor layer. The first and second nitride semiconductor layers form a Schottky junction with the gate electrode. A first layer is located between the gate electrode and the drain electrode in the third direction and is in contact with the gate electrode, and is in contact with the second nitride semiconductor layer in a second direction. The first layer suppresses induction of the two-dimensional carrier gas in the first nitride semiconductor layer opposite to the first layer in the first direction.

Semiconductor device

It is an object of the present invention to provide a technique for making it possible to reduce the size of a Mach-Zehnder type optical modulator. In a clad layer, provided are a plurality of first and second via holes along an optical waveguide. The Mach-Zehnder type optical modulator includes a first travelling wave electrode connected to a first semiconductor region through the plurality of first via holes, extending along the optical waveguide in a plan view to have a width which is wider and a length and a second travelling wave electrode connected to a second semiconductor region through the plurality of second via holes, extending along the optical waveguide in a plan view to have a width which is wider and a length.

Mach-Zehnder type optical modulator

Growing community of inventors

Tokyo, Japan

Marika Nakamura