Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Marie Heitzmann

Mohammed Benwadih

Mohamed Benwadih

Jean-Marie Verilhac

Simon Charlot

Joël Pauchet

Maxime Schroder

Yohann Thomas

Christine Nayoze-Coynel

Pierre Toudret

Jean François Blachot

A method of treating a carbon substrate, includes the successive steps of impregnating the carbon substrate with an aqueous solution containing an amorphous fluorinated copolymer of tetrafluoroethylene and of perfluoromethoxy dioxole, drying the carbon substrate at a pressure lower than the atmospheric pressure, and obtaining a carbon substrate impregnated with a fluorinated copolymer. Such a carbon substrate may be used as a gas diffusion layer in a fuel cell.

Method of hydrophobic treatment of a carbon substrate

A method of structuring an active organic layer deposited on a substrate, including depositing a sacrificial layer on the substrate by photolithography, the sacrificial layer being made of at least one resist, creating at least one pattern inside of the sacrificial layer, depositing an active organic layer on the sacrificial layer and in the pattern, depositing a protective layer made of organic polymer on the active layer and in the pattern of the resist sacrificial layer, removing the sacrificial layer by projection of a solvent on the resin forming the layer, and removing the protective layer by dissolving the polymer forming it in a solvent.

Process of structuring an active organic layer deposited on a substrate

A laser-crosslinkable material appearing in non-crosslinked or partially crosslinked form is used to protect, during a laser etching, the electrodes of an organic transistor.

Reduction of the effects of cap-like projections, due to laser ablation of a metal level by using a non-crosslinked light or heat-crosslinkable polymer layer

The invention relates to a process for improving the adhesion of a layer made of a material that is crosslinkable by exposure to UV rays to a substrate, and also to a process for manufacturing a transistor comprising at least one step of performing such a process. This process for improving the adhesion of a layer made of a material M to the surface of a substrate S is characterized in that: The invention finds application in particular in the field of manufacturing transistors.

Process for improving the adhesion of a UV-crosslinkable material to a substrate

The method for making a hole in a layer includes the provision of first and second adhesion areas on a surface of a support. The first area has dimensions corresponding to the dimensions of the hole. The method includes depositing a layer on the first and second adhesion areas. The material of the layer has an adhesion coefficient to the first area lower than the adhesion coefficient to the second area. The part of layer arranged above the first area is eliminated by a fluid jet.

Method for making holes using a fluid jet

The invention relates to a method of depositing a layer of material onto the surface of an object, of the type comprising the deposition of a layer of solution of said material in a first liquid followed by the evaporation of the first liquid to form the layer of material. According to the invention, the method comprises the formation of a layer of a second liquid interposed between the object and the layer of solution, the second liquid being immiscible with the first liquid, of density greater than that of the first liquid and with an evaporating temperature higher than that of the first liquid.

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Sinard, France

Marie Heitzmann