Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Stmicroelectronics (crolles 2) Sas

Stmicroelectronics (grenoble 2) Sas

Commissariat a L'energie Atomique Et Aux Energies

Pyxalis

Stmicroelectronics (rousset) Sas

Marie Guillon

Yvon Cazaux

Francois Roy

François Roy

Arnaud Laflaquiere

Benoit Giffard

Boris Rodrigues

Josep Segura Puchades

Boris Rodrigues Goncalves

Olivier Saxod

Alexis Rochas

A pixel matrix includes a sub-matrix of four adjacent pixels. Each of the pixels of the sub-matrix comprises: a set of a photoelectric-effect element and a memory point, a detection node, a transfer gate. The binning stage is connected to the set and is common with an adjacent pixel of the sub-matrix. At least one detection node per sub-matrix is common to two adjacent pixels of the sub-matrix. The pixel matrix furthermore comprises at least one readout stage per sub-matrix, connected to the common detection node.

Global-shutter analogue-binning pixel matrix

A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.

Time-of-flight detection pixel

A time-of-flight detection pixel includes a photosensitive area including a first doped layer and a charge collection area extending in the first doped layer. At least two charge storage areas extend from the charge collection area, each including a first well more heavily doped than the charge collection area and separated from the charge collection area by a first portion of the first doped layer which is coated with a gate. Each charge storage area is laterally delimited by two insulated conductive electrodes, extending parallel to each other and facing each other. A second heavily doped layer of opposite conductivity coats the pixel except for at each portion of the first doped layer coated with the gate.

The invention concerns a pixel of an image array comprising one or more charge storage structures (), each charge storage structure comprising: a first charge storage trench () doped to have a first conductivity type and having a first end () configured to receive charge accumulated by a photodiode; a second charge storage trench () doped to have the first conductivity type; and a first transfer gate () linking a second end () of the first charge storage trench () and the second charge storage trench () to a sense node (), wherein the first and second charge storage trenches are linked together by a linking channel () doped to have the first conductivity type and bordering a portion of an edge of the transfer gate ().

Storage zone for an image array pixel

An image sensor arranged inside and on top of a semi-conductor substrate having a front surface and a rear surface, the sensor including a plurality of pixels, each including: a photosensitive area, a reading area, and a storage area extending between the photosensitive area and the reading area; a vertical insulated electrode including an opening of transfer between the photosensitive area and the storage area; and at least one insulation element among the following: a) a layer of an insulating material extending under the surface of the photosensitive area and of the storage area and having its front surface in contact with the rear surface of the electrode; and b) an insulating wall extending vertically in the opening, or under the opening.

Image sensor with vertical electrodes

The invention concerns an image sensor comprising: at least one pixel having a photodiode (PD); a sensing node (SN) coupled to the photodiode via a transfer gate (); and a further node (AN) coupled to the sensing node (SN) via a first transistor (); and a control circuit () adapted: to apply, during a reset operation of the voltage levels at the sensing node (SN) and further node (AN), a first voltage level (VDD) to a control node of the first transistor (); and to apply, during a transfer operation of charge from the photodiode (PD) to the sensing node (SN), a second voltage level (VSK) to the control node of the first transistor (), the second voltage level being lower than the first voltage level and higher than a ground voltage of the pixel.

Growing community of inventors

Fontanil-Cornillon, France

Marie Guillon