Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Stmicroelectronics (crolles 2) Sas

Institut Polytechnique De Grenoble

Universite Grenbole Alpes

Energies Alternatives

Stmicroelectronics (grenoble 2) Sas

Université Grenoble Alpes

Marie Gorisse

Alexandre Reinhardt

Fabrice Casset

Lamine Benaissa

Skandar Basrour

Cédrick Chappaz

Jean-Sébastien Moulet

A method for producing an adjustable bulk acoustic wave resonator comprising a transducer stack (E) and a tuning stack (E). According to the invention, transducer stack (E) includes two defined electrodes () and piezoelectric material (), and stack (E) includes a layer of piezoelectric material () and two defined electrodes (). The method includes: a) production of the transducer stack; b) formation of an electrically insulating layer on an electrode () of the transducer stack; c) formation of a defined electrode () of the tuning stack on the electrically insulting layer such that it is aligned with the electrodes of the transducer stack; d) assembly, on the electrode (), of a substrate of piezoelectric material; e) fracturing of the substrate of piezoelectric material; and f) formation of the other defined electrode () of the tuning stack, aligned with the defined electrode ().

Method for the production of a bulk acoustic wave resonator with a reduced parasitic capacitance

A vibrating device comprises: a first support configured to be deformed having a surface defined in a plane in directions X and Y; at least one actuator configured to generate plate modes propagated in the first support; the first support comprising: at least one defect with respect to the propagation of the plate modes; the defect being of geometrical nature or corresponding to a structural heterogeneity; comprising: a second support; at least one embedded mechanical reflector secured to the first support and in contact with the first support, configured to immobilize the first support in at least one direction Z at right angles to the directions X and Y, the mechanical reflector being secured to the second support and; the embedded mechanical reflector being configured to isolate a so-called active zone belonging to the surface defined in a plane in directions X and Y in which the plate modes are propagated, the active zone excluding the defect; the actuator being situated in the active region.

Vibrating device comprising embedded mechanical reflectors for defining an active plate mode propagation area and mobile apparatus comprising the device

An acoustic wave bandpass filter comprises at least an input first acoustic wave resonator with an output surface, and an output second acoustic wave resonator with an input surface, said resonators being coupled to each other along a set direction, the input and output surfaces being substantially opposite, and at least one first phononic crystal structure between said input and output resonators and/or a second phonic crystal structure at the periphery of said resonators so as to guide the acoustic waves, generated by said input resonator, toward said output resonator along said set direction, the resonators ensuring an impedance conversion and/or a mode conversion.

Acoustic wave bandpass filter comprising integrated acoustic guiding

An acoustic wave bandpass filter comprises at least two bulk acoustic wave resonators, laterally coupled to each other acoustically, each resonator including a film of piezoelectric material and at least a first electrode and/or a second electrode, said bulk waves propagating in a direction perpendicular to the plane of the film of piezoelectric material, characterized in that: it further comprises at least a first phononic crystal structure between said resonators such that the transmission coefficient of the lateral acoustic waves can be decreased in a direction parallel to the plane of the piezoelectric film; and the first phononic crystal structure is formed in a matrix of dielectric material or with patterns made from dielectric material.

Laterally coupled BAW filter employing phononic crystals

A process for producing an acoustic device having a phononic crystal structure comprising inclusions produced in a first medium distributed in a matrix of a second medium, to block propagation of acoustic waves within a bandgap frequency band, includes: defining geometric parameters of said inclusions, which have walls contacting said matrix, making at least one non-zero first wall angle, to the normal of the plane of said structure, said geometric parameters including said first wall angle; determining a function relating to variation in frequency position of said bandgap with said wall angle or relating to variation in width of said bandgap with said wall angle; determining said at least first angle, for a selected frequency position and/or selected width of the bandgap, from the function or functions determined beforehand; and producing said inclusions having at least said first wall angle in said matrix formed by said second medium.

Growing community of inventors

Chauray, France

Marie Gorisse