Infineon Technologies Ag

Marie Denison

Nils Jensen

Hannes Estl

An integrated circuit is disclosed having a semiconductor component comprising a first p-type region and a first n-type region adjoining the first p-type region, which together form a first pn junction having a breakdown voltage. A further n-type region adjoining the first p-type region or a further p-type region adjoining the first n-type region is provided, the first p-type or n-type region and the further n-type or p-type region adjoining the latter together forming a further pn junction having a further breakdown voltage, the first pn junction and the further pn junction being connected or connectable to one another in such a way that, in the case of an overloading of the semiconductor component, on account of a current loading of the first pn junction, first of all the further pn junction breaks down.

Integrated circuit

The invention relates to an integrated circuit having a semiconductor component () comprising a first p-type region () and a first n-type region () adjoining the first p-type region (), which together form a first pn junction having a breakdown voltage. According to the invention, a further n-type region adjoining the first p-type region or a further p-type region () adjoining the first n-type region () is provided, the first p-type or n-type region () and the further n-type or p-type region () adjoining the latter together forming a further pn junction having a further breakdown voltage, the first pn junction and the further pn junction being connected or connectable to one another in such a way that, in the case of an overloading of the semiconductor component, on account of a current loading of the first pn junction, first of all the further pn junction breaks down.

A quasi-vertical semiconductor component in which, by variation of the layout, the process or the wiring of inner cells, a compensation for a voltage drop along a buried layer is provided in order thus to ensure a similar operating point of the individual inner cells in the well. Therefore, the disadvantages brought about by a voltage drop in the buried layer are ultimately overcome.

Quasi-vertical semiconductor component

A lateral double-diffused MOS transistor (LDMOS) has a body zone and additional body regions assigned to the body zone, thereby producing a 'deep body.' The deep body results in a quasi one-dimensional course of the potential lines, with the result that the dielectric strength is increased. The self-alignment between gate and channel is preserved, and parameter fluctuations are reduced.

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Munich, Germany

Marie Denison