Intel Corporation

Marie Conte

Tahir Ghani

Charles Henry Wallace

Leonard P Guler

Elliot Tan

Mohit K Haran

Chanaka D Munasinghe

Saurabh Morarka

Krishna Kumar Ganesan

Makram Abd El Qader

Sean Michael Pursel

An integrated circuit structure includes a first vertical arrangement of horizontal nanowires and a second vertical arrangement of horizontal nanowires. A first gate stack is over the first vertical arrangement of horizontal nanowires, and a second gate stack is over the second vertical arrangement of horizontal nanowires. An end of the second gate stack is spaced apart from an end of the first gate stack by a gap. A first dielectric gate spacer is laterally around the first gate stack and has a portion along an end of the first gate stack and in the gap. A second dielectric gate spacer is laterally around the second gate stack and has a portion along an end of the second gate stack and in the gap. The portion of the second dielectric gate spacer is laterally merged with the portion of the first dielectric gate spacer in the gap.

Integrated circuit structures having cut metal gates with dielectric spacer fill

Growing community of inventors

Hillsboro, OR, United States of America

Marie Conte