Asml Netherlands B.v.

Marie-Claire Van Lare

Frank Jan Timmermans

Johannes Jacobus Matheus Baselmans

Maurits Van Der Schaar

Duan-Fu Stephen Hsu

Jozef Maria Finders

Stefan Hunsche

Maxim Pisarenco

Hermanus Adrianus Dillen

Abraham Slachter

Koenraad Van Ingen Schenau

Marleen Kooiman

Fuming Wang

Willem Jan Bouman

Vadim Yourievich Timoshkov

Sudharshanan Raghunathan

Aiqin Jiang

Friso Wittebrood

Huaichen Zhang

John Martin Mcnamara

Luis Alberto Colina Santamaría Colina

John Martin Mc Namara

Methods related to improving a simulation processes and solutions (e.g., retargeted patterns) associated with manufacturing of a chip. A method includes obtaining a plurality of dose-focus settings, and a reference distribution based on measured values of a characteristic of a printed pattern associated with each setting of the plurality of dose-focus settings. The method further includes, based on an adjustment model and the plurality of dose-focus settings, determining a probability density function (PDF) of the characteristic such that an error between the PDF and the reference distribution is reduced. The PDF can be a function of the adjustment model and variance associated with dose, the adjustment model being configured to change a proportion of non-linear dose sensitivity contribution to the PDF. A process window can be adjusted based on the determined PDF of the characteristic.

Method for calibrating simulation process based on defect-based process window

A method for applying a deposition model in a semiconductor manufacturing process. The method includes predicting a deposition profile of a substrate using the deposition model; and using the predicted deposition profile to enhance a metrology target design. The deposition model can be calibrated using experimental cross-section profile information from a layer of a physical substrate. In some embodiments, the deposition model is a machine-learning model, and calibrating the deposition model includes training the machine-learning model. The metrology target design may include an alignment metrology target design or an overlay metrology target design, for example.

Method for applying a deposition model in a semiconductor manufacturing process

An attenuated phase shift patterning device including a first component for reflecting radiation, and a second component for reflecting radiation with a different phase with respect to the radiation reflected from the first component, the second component covering at least a portion of the surface of the first component such that a pattern including at least one uncovered portion of the first component is formed for generating a patterned radiation beam in a lithographic apparatus in use, wherein the second component includes a material having a refractive index with a real part (n) being less than 0.95 and an imaginary part (k) being less than 0.04.

Patterning device and method of use thereof

Apparatuses and techniques for suppressing a zeroth order portion of a configured radiation beam. In some embodiments, an extreme ultraviolet (EUV) lithographic apparatus for forming an image on a substrate by use of an EUV radiation beam that is configured by a patterning device comprising a pattern of reflective regions and partially reflective regions, wherein the partially reflective regions are configured to suppress and apply a phase shift to a portion of the EUV radiation beam, may include a projection system. The projection system may be configured to suppress a zeroth order portion of a configured EUV radiation beam, and direct an unsuppressed portion of a configured EUV radiation beam towards a substrate to form an image on the substrate.

Imaging via zeroth order suppression

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Utrecht, Netherlands

Marie-Claire Van Lare