Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat a L'energie Atomique

Marie-Anne Jaud

Olivier Rozeau

Maud Vinet

Nicolas Posseme

Laurent Grenouillet

Olivier Thomas

Laurent Clavelier

Perrine Batude

Thomas Ernst

Thierry Poiroux

Sebastien Barnola

Sébastien Barnola

Joris Lacord

Jerome Mazurier

William Vandendaele

Abygael Viey

Sébastien Martinie

Sebastien Martinie

Jérôme Mazurier

A method of estimating a nitrogen site carbon concentration, in a first epitaxial layer made of carbon-doped gallium nitride of an electronic component, including steps of: estimating an electric capacitance of a stack interposed between the first layer and a first electrode of the component; heating the component; measuring an offset of a threshold voltage of the component; and deducing therefrom a nitrogen site carbon surface concentration in the first layer.

Concentration estimation method

Embodiments of the invention determine intrinsic parameters of stacked nanowires/nanosheets GAA MOSFETs comprising Nnanowires and/or nanosheets, each nanowire/nanosheet being surrounded in an oxide layer, the oxide layers being embedded in a common gate, wherein the method comprises the following steps:

Computer implemented method for determining intrinsic parameter in a stacked nanowires MOSFET

There is provided a method for producing on a same substrate at least one first transistor and at least one second transistor that have different characteristics, the method including producing at least one first gate pattern and at least one second gate pattern on the substrate; depositing, on the first and the second gate patterns, at least: a first protective layer, and a second protective layer overlying the first protective layer and made of a material different from that of the first protective layer; masking of the second gate pattern by a masking layer; isotropic etching of the second protective layer; removing the masking layer; and anisotropic etching of the second protective layer selectively relative to the first protective layer.

Method for producing on the same transistors substrate having different characteristics

A computer implemented method for calculating a charge density qof a first gate of a double gate transistor comprising a thin body with a first and a second gate interface, the method including determining, using a physical processor, an initial estimate qof the charge density of the first gate; performing, using the physical processor, at least two basic corrections of the initial estimate based on a Taylor development of a function f(q) able to be nullified by a correct value of the charge density qof the first gate.

Computer implemented method for calculating a charge density at a gate interface of a double gate transistor

A microelectronic device including: a substrate surmounted by a stack of layers, at least one first transistor situated at a given level of said stack, at least one second transistor situated at a second level of said stack, above said given level, the first transistor including a gate electrode situated opposite a channel zone of the second transistor, the first transistor and the second transistor being separated by an insulating zone, and said insulating zone being constituted of several different dielectric materials include a first dielectric material and a second dielectric material.

Circuit with transistors integrated in three dimensions and having a dynamically adjustable threshold voltage VT

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Claix, France

Marie-Anne Jaud