International Business Machines Corporation

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Lockheed Martin Corporation

Lockheed Corporation

Marie Angelopoulos

Jane M Shaw

Wu-Song S Huang

Wayne Martin Moreau

Katherina E Babich

Ravi F Saraf

Jeffrey Donald Gelorme

Bruce Kenneth Furman

Karen Elizabeth Petrillo

David Robert Medeiros

Arpan Pravin Mahorowala

Ranee W Kwong

Teresita Ordonez Graham

Yun-Hsin Liao

Niranjan Mohanlal Patel

Robert Neal Lang

Sampath Purushothaman

Dirk Pfeiffer

Ari Aviram

David Earle Seeger

C Richard Guarnieri

Qinghuang Lin

Alfred Viehbeck

Vlasta A Brusic

Judith Marie Roldan

Ratnam Sooriyakumaran

Scott David Halle

Thomas Harold Newman

Michael Straight Hibbs

S Jay Chey

Edward D Babich

Kenneth Christopher Racette

Sean David Burns

Shui-Chih Alan Lien

Allen H Gabor

Inna V Babich

George Frederick Walker

Claudius Feger

Liam David Comerford

David Andrew Lewis

John Patrick Simons

Richard Anthony DiPietro

Sally Ann Swanson

Steven E Molis

Richard D Kaplan

Jeffrey W Labadie

Stanley E Perreault

Douglas Charles LaTulipe

Yun Hsin Liao

Ali Afzali-Ardakani

Alfred Grill

Christos Dimitrios Dimitrakopoulos

Chandrasekhar Narayan

Richard Anthony Conti

Vishnubhai Vitthalbhai Patel

Timothy A Brunner

Kuang-Jung Chen

Ahmad D Katnani

Maria Gabrani

Alan G MacDiarmid

Nancy C LaBianca

Wenjie Li

Ali Afzali-ardakani

Herman Russell Wendt

Raul E Acosta

Ranee Wai-Ling Kwong

James J Bucchignano

Cameron James Brooks

Christopher Karl Magg

Andrew T Pomerene

Ritwik Ray

Jack A Dickerson

Joseph Paul Kuczynski

Robert David Allen

Fuad Elias Doany

Willi Volksen

Eric D Perfecto

Gregory Breyta

Phillip Joe Brock

Vijay Krishnarao Naik

Mitchell S Cohen

Thomas Benjamin Faure

Daniel George Berger

Shilpa N Mahatma

Balaji Krishnapuram

Karl J Puttlitz, Sr

Jae M Park

Dennis L Rogers

Stuart I Yaniger

Kurt R Kimmel

Shahram Ebadollahi

Steve Harris Weingart

Richard Allen John

Faisal Farooq

Juan R Maldonado

Martha Inez Sanchez

James V Codella

Michal Rosen-Zvi

Karl Joseph Puttlitz

Ching-Hua Chen

A mechanism is provided in a data processing system to implement a feature extraction tool for graphical user interface based feature extraction. The feature extraction tool receives selection by a user of a dataset from which features are to be extracted. The feature extraction tool loads a plurality of feature definitions. The feature extraction tool generates a graphical user interface that allows the user to add features from the plurality of features to a feature file. The feature extraction tool presents the graphical user interface to the user and receives user selection of at least one feature to be added to the feature file. The feature extraction tool generates the feature file based on the user selection of the at least one feature.

Graphical user interface based feature extraction application for machine learning and cognitive models

Methods and systems are provided to extract information within complex documents, and the extracted information may be compared to identify differences between complex documents or the extracted information may be analyzed with respect to the individual document. Information is extracted from complex documents comprising unstructured data to create a structured data repository, or analytics knowledge base. This database may be utilized to compare concepts that are common to one or more documents, allowing ease of comparison of documents, and identification of information that is different or identification of (same or similar) information that is presented differently in a set of complex documents.

Extraction of information and smart annotation of relevant information within complex documents

A system provides an intervention for a user and comprises at least one processor. The system monitors behavior and context of a user to generate a behavior history. One or more models are utilized to determine an intervention for the user to induce a behavior modification, wherein the one or more models map interventions to user context and behavior and utilize the behavior history to determine an effective intervention for the user. The intervention is provided to the user and feedback is received in response to the intervention. The one or more models are updated based on the feedback. Embodiments of the present invention further include a method and computer program product for providing an intervention to a user in substantially the same manner described above.

Personalized intervention based on machine learning of behavior change states

A lithographic structure comprising: an organic antireflective material disposed on a substrate, and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiObackbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.

Process of making a lithographic structure using antireflective materials

A lithographic structure comprising: an organic antireflective material disposed on a substrate; and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiObackbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.

Methods of forming materials containing precursors to electrically conductive polymers and electrically conductive polymers are described which have a high degree of crystallinity. The high degree of crystallinity is achieved by preparing the materials under conditions which provide a high degree of mobility to the polymer molecules permitting them to associate with one another to form a crystalline state. High levels of electrical conductivity are achieved in in the electrically conductive materials without stretch orienting the material. The enhanced electrical conductivity is isotropic as compared to a stretch oriented film which has isotropic electrical conductivity. In the preferred embodiment, additives are added to a solution containing a solvent and the precursor or electrically conductive polymer. The additives are preferably plasticizer of diluents. As the solvent is removed the material dries and contains a higher degree of crystallinity than in the absence of the additive.

Methods of fabricating plasticized, antiplasticized and crystalline conducting polymers and precursors thereof

A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements selected from the group consisting of O, N, S and F; and a photoresist material disposed on the RCHX material. The invention is also directed to methods of making the lithographic structure, and using the structure to pattern a substrate.

Process of making a semiconductor device using multiple antireflective materials

Resist compositions having good footing properties even on difficult substrates are obtained by using a combination of base additives including a room temperature solid base, and a liquid low vapor pressure base. The compositions are especially useful on metal substrates such as chromium-containing layers commonly used in mask-making.

Use of mixed bases to enhance patterned resist profiles on chrome or sensitive substrates

Electronic assemblies, especially one containing volatile memory, used a flexible membrane with conducting lines which acts as an intrusion sensor against chemical and mechanical attacks. The lines are fabricated from inherently conducting polymers which are solution processed and directly patterned. The material was applied to a flexible polymer film by spin coating and patterned by application of a resist, followed by exposure/development of the resist and transferring the image into the polyaniline by reactive ion etching techniques. The conducting lines have high conductivity, tranparency properties which made them difficult to detect and possess excellent adhesion to the substrate film, as well as to the potting material which enclosed the structure. They also offered lightweight advantages over conventionally filled materials. These materials can also be used in conjunction with conventional conductor materials to further enhance protection against intrusion by sophisticated mechanical means.

Data protection by detection of intrusion into electronic assemblies

A radiation-sensitive composition (and method of fabricating a device using the composition) includes a nonpolymeric silsesquioxane including at least one acid labile moiety, a polymer including at least one member selected from the group consisting of an aqueous base soluble moiety and an acid labile moiety, and a radiation-sensitive acid generator. Another radiation-senstive composition (and method of fabricating a device using the composition) includes a nonpolymerc silsesquioxane including at least one aqueous base soluble moiety, a polymer including an aqueous base soluble moiety, a crosslinker, and a radiation-sensitive acid generator.

Radiation-sensitive composition and method of fabricating a device using the radiation-sensitive composition

Multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibiting high resolution, residue free lithography and methods of preparing these materials.

Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof

A barrier layer for fabricating at least one of a device and a mask includes a polymeric photoacid generator formed between a substrate and a resist layer. The barrier layer may be used, for example, in forming a resist image, and forming a patterned material feature on a substrate.

Ultrathin polymeric photoacid generator layer and method of fabricating at least one of a device and a mask by using said layer

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Cortlandt Manor, NY, United States of America

Marie Angelopoulos