Thomson-csf

Marie A Di Forte

Claude Puech

Michel Papuchon

Pierre Leclerc

Baudouin De Cremoux

Pierre Hirtz

A semiconductor laser particularly useful for frequency multiplexing in optical telecommunications having a distributed resonator supplying from a single etched grating, two or more radiations of different wavelengths. The laser comprises a junction formed by an n-type substrate, a p-type radiation-confinement region, and a surface region, a grating being etched at the interface between the confinement region and the surface region. Useful elementary bands of the junction for the attainment of the laser effect are fixed by proton implantation in the surface region of the junction. The elementary band-type regions are convergent and form, with the perpendicular to the grooves of the grating, angles that are determined so that the spacing along the various bands has a specified value linked directly to the wavelength of the corresponding emitted radiation.

Multiple laser having a distributed resonator

The invention relates to a semiconductor laser with a distributed reflector comprising a semiconductor junction, one of whose semi-transparent mirrors is a split face of the semiconductor in which is integrated a light emitting junction with epitaxial layers. The active layer of this junction is coupled to a waveguide integrated in a dielectric medium, on one face of which is engraved a grating forming a distributed reflector playing the part of the second mirror. The reflector, when functioning according the second order of counter coupling emits a diffracted wave normal to the waveguide which can easily be coupled to an optical fiber.

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Paris, France

Marie A Di Forte