Applied Materials, Inc.

Maribel Maldonado-Garcia

Cong Trinh

Mihaela A Balseanu

Ning Li

Li-Qun Xia

Mark Joseph Saly

Alexander Viktorovich Garachtchenko

Keenan Navarre Woods

Lisa J Enman

Wenbo Yan

Bhaskar Jyoti Bhuyan

Tsutomu Tanaka

Kevin Griffin

Kenric T Choi

Saloni Sawalkar

Kendrick H Chaney

Zohreh Razavi Hesabi

Vipin Jose

Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250° C. to form a silicon nitride film with a low etch rate without damaging the metal surface.

Methods and apparatus for low temperature silicon nitride films

Methods of depositing thin films for an electronic device, for example a semiconductor device include applying a first pulsed plasma with or without a reactant and a second continuous plasma with a reactant.

Thin layer deposition with plasma pulsing

An system, method and software for controlling processes of an auto-refill system of an ampoule including one or more sensors configured to determine one or more liquid level heights within the ampoule. The auto-refill system having a state machine configured to control the auto-refill system, the state machine having one or more states for refilling the ampoule.

Control of liquid delivery in auto-refill systems

Silyl pseudohalides having a general formula of RSiX, where n is a range of 1-4, each R is independently selected from H, alkyl, alkenyl, aryl, amino, alkyl amino, alkoxide, and phosphine groups, and each X is a pseudohalide selected from nitrile, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate and isoselenocyanate are disclosed. Further, some embodiments of the disclosure provide methods for depositing silicon-containing films using silyl pseudohalides.

Silyl pseudohalides for silicon containing films

Methods of forming a stack without damaging underlying layers are discussed. The encapsulation layer and dielectric layer are highly conformal, have low etch rates, and good hermeticity. These films may be used to protect chalcogen materials in PCRAM devices or any substrates sensitive to oxygen or moisture. Some embodiments utilize a two-step process comprising a first ALD process to form an encapsulation layer and oxidation process to form a dielectric layer.

Low temperature silicon nitride/silicon oxynitride stack film with tunable dielectric constant

Methods of depositing an encapsulation stack without damaging underlying layers are discussed. The encapsulation stacks are highly conformal, have low etch rates, low atomic oxygen concentrations, good hermeticity and good adhesion. These films may be used to protect chalcogen materials in PCRAM devices. Some embodiments utilize a two-step process comprising a first ALD process to form a protective layer and a second plasma ALD process to form an encapsulation layer.

Multilayer encapsulation stacks by atomic layer deposition

Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250&#xb0; C. to form a silicon nitride film with a low etch rate without damaging the metal surface.

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San Jose, CA, United States of America

Maribel Maldonado-Garcia