Seagate Technology Incorporated

Zetta Research and Development LLC - Aqt Series

Aqt Solar, Inc.

Mariana Rodica Munteanu

Erol Girt

Thomas P Nolan

Miaogen Lu

Hans Jurgen Richter

Brian Josef Bartholomeusz

Michael Joseph Stirniman

Connie C Liu

Raj Thangaraj

Amith Kumar Murali

Steve Kuo-Hsing Hwang

Vardaan Chawla

Samuel Dacke Harkness, Iv

Chung Yuang Shih

Jean Ling Lee

Michael C Wu

Weilu Hang Xu

Shanghsien Alex Rou

Kueir-Weei Chour

Abebe Hailu

Hans Jürgen Richter

Qixu David Chen

Zhong Stella Wu

Charles Changging Chen

Li-Lien Lee

Kuo-Hsing Hwang

Zhong (Stella) Wu

Michael Bartholomeusz

Taesun Ernest Kim

Charles Changqing Chen

Edward T Yen

Thanh Thien Ha

Ed Yen

Felix Trejo

Kirk Hayes

A ferromagnetically coupled magnetic recording medium having a first ferromagnetic layer, a second ferromagnetic layer, and a ferromagnetic coupling layer to ferromagnetically couple the first ferromagnetic layer to the second ferromagnetic layer is used as stable magnetic media with high MT in high density recording hard drives. The first ferromagnetic layer is the stabilization layer and the second ferromagnetic layer is the main recording layer. The ferromagnetic coupling layer comprises a conductive material having a thickness which produces ferromagnetic coupling between said first ferromagnetic layer and said second ferromagnetic layer via the RKKY interaction.

Feromagnetically coupled magnetic recording media

An embodiment of the invention relates to a perpendicular magnetic recording medium comprising (1) a substrate, (2) an interlayer comprising hexagonal columns and (3) a magnetic layer, wherein the magnetic layer is deposited applying a bias voltage to the substrate such that the magnetic layer comprises magnetic grains having substantially no sub-grains within the magnetic layer, and the magnetic layer has perpendicular magnetic anisotropy.

High density granular perpendicular recording media for mechanical reliability and corrosion resistance

In one embodiment, a method includes depositing a CZT(S, Se) precursor layer onto a substrate, introducing a source-material layer comprising Sn(S, Se) into proximity with the precursor layer, and annealing the precursor layer in proximity with the source-material layer in a constrained volume.

Closed-space sublimation process for production of CZTS thin-films

In one embodiment, a method includes depositing a CIGS precursor layer onto a substrate, introducing a source-material layer into proximity with the precursor layer, where the source-material layer includes one or more of Cu, In, or Ga, and one or more of S or Se, and annealing the precursor layer in proximity with of the source-material layer, where the annealing is performed in a constrained volume, and where the presence of the source-material layer reduces decomposition of volatile species from the precursor layer during annealing.

Closed-space annealing process for production of CIGS thin-films

In one embodiment, a method includes depositing a chalcogenide precursor layer onto a substrate, introducing a cover into proximity with the precursor layer, and annealing the precursor layer in proximity with of the cover, where the annealing is performed in a constrained volume, and where the presence of the cover reduces decomposition of volatile species from the precursor layer during annealing.

Closed-space annealing of chalcogenide thin-films with volatile species

Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In a particular implementation, a photovoltaic cell includes a granular semiconductor and oxide layer with nanometer-size absorber semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer is disposed between electron and hole conducting layers. In some implementations, multiple semiconductor and oxide layers can be deposited.

Semiconductor grain and oxide layer for photovoltaic cells

In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body having a target body composition that comprises Cu(SeSTe), wherein the value of x is greater than or equal to approximately 0.5, the value of y is between approximately 0 and approximately 1, the value of z is between approximately 0 and approximately 1, and the total amount of Se, S, and Te phases in the target body composition comprise less than 50 volume percent of the target body composition.

Low melting point sputter targets for chalcogenide photovoltaic applications and methods of manufacturing the same

Applying bias voltage during formation of granular recording media

In one embodiment, a method includes depositing a photoactive layer onto a first substrate, depositing a contact layer onto the photoactive layer, attaching a second substrate onto the contact layer, and removing the first substrate from the photoactive layer, contact layer, and second substrate.

Reverse stack structures for thin-film photovoltaic cells

An interlayer structure that, in one implementation, includes a combination of an amorphous or nano-crystalline seed-layer, and one or more metallic layers, deposited on the seed layer, with the fcc, hcp or bcc crystal structure is used to epitaxially orient a semiconductor layer on top of non-single-crystal substrates. In some implementations, this interlayer structure is used to establish epitaxial growth of multiple semiconductor layers, combinations of semiconductor and oxide layers, combinations of semiconductor and metal layers and combination of semiconductor, oxide and metal layers. This interlayer structure can also be used for epitaxial growth of p-type and n-type semiconductors in photovoltaic cells.

Interlayer design for epitaxial growth of semiconductor layers

In one example embodiment, a method includes sputtering one or more absorber layers over a substrate. In a particular embodiment, the substrate is pre-heated to a substrate temperature of at least approximately 300 degrees Celsius prior to the sputtering and during the sputtering of each of one or more of the absorber layers, and the sputtering of at least one of the absorber layers is performed in a sputtering atmosphere having a pressure of at least 0.5 Pascals. Additionally, in a particular embodiment, the sputtering of at least one of the absorber layers comprises sputtering from a sputter target that comprises a chalcogenide alloy that comprises copper (Cu) and one or more of sulfur (S), selenium (Se), or tellurium (Te).

Chalcogenide-based photovoltaic devices and methods of manufacturing the same

A low-coupling perpendicular magnetic recording media comprising a magnetic storage layer and at least one low saturation magnetization layer. The magnetic storage layer has a saturation magnetization between about 400-900 emu/cm3 and the at least one low saturation magnetization layer has a saturation magnetization below that of the magnetic storage layer.

Low-coupling oxide media (LCOM)

A perpendicular magnetic recording medium having a dual-layer magnetic film is disclosed. The bottom layer is completely exchange decoupled, and the top layer contains a certain amount of exchange coupling optimized for recording performance. Preferably, the bottom magnetic layer contains stable oxide material (for example, TiO) and other non-magnetic elements (for example, Cr). A method of manufacturing the media is also disclosed.

Method and manufacture process for exchange decoupled first magnetic layer

In one example embodiment, a method includes depositing one or more thin-film layers onto a substrate. More particularly, at least one of the thin-film layers comprises at least one electropositive material and at least one of the thin-film layers comprises at least one chalcogen material suitable for forming a chalcogenide material with the electropositive material. The method further includes annealing the one or more deposited thin-film layers at an average heating rate of or exceeding 1 degree Celsius per second. The method may also include cooling the annealed one or more thin-film layers at an average cooling rate of or exceeding 0.1 degrees Celsius per second.

Chalcogenide absorber layers for photovoltaic applications and methods of manufacturing the same

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Santa Clara, CA, United States of America

Mariana Rodica Munteanu