Infineon Technologies Ag

Marian Sebastian Broll

Holger Schulze

Evelyn Napetschnig

Stefan Woehlert

Alexander Herbrandt

Barbara Eichinger

Alparslan Takkac

Daniel Bolowski

Stefan Tophinke

Florian Eacock

Gert Pfahl

Michael Kreuz

A method of forming a semiconductor device includes providing a carrier comprising a die attach pad, providing a semiconductor die that includes a bond pad disposed on a main surface of the semiconductor die, and providing a metal interconnect element, arranging the semiconductor die on the die attach pad such that the bond pad faces away from the die attach pad, and welding the metal interconnect element to the bond pad, wherein the bond pad comprises first and second metal layers, wherein the second metal layer is disposed between the first metal layer and a semiconductor body of the semiconductor die, wherein a thickness of the first metal layer is greater than a thickness of the second metal layer, and wherein the first metal layer has a different metal composition as the second metal layer.

High density and durable semiconductor device interconnect

A semiconductor substrate has a bond pad. The bond pad includes a layer of an aluminum alloy having a chemical composition including at least 0.3% by weight of at least one of Zn, Mg, Sc, Zr, Ti, Ag and/or Mn, with the balance being at least Al and incidental impurities.

Semiconductor substrate having a bond pad material based on aluminum

Growing community of inventors

Soest, Germany

Marian Sebastian Broll