Nxp B.v.

Nederlandse Organisatie Voor Toegepast-natuurwetenschappelijk Onderzoek Tno

Maria Mathea Antonetta Burghoorn

Freddy Roozeboom

Jeroen Van Den Brand

Edsger Constant Pieter Smits

Eric Cornelis Egbertus Van Grunsven

Daniele Raiteri

Franciscus Hubertus Marie Sanders

Peter Zalar

The present disclosure concerns a pressure sensor, comprising at least two adjacent electrically conductive leads disposed in a pattern on a face of a first elastomeric carrier; and an electrically resistive layer formed of a electrically resistive composite material for shunting the at least two adjacent electrically conductive leads, said electrically conducting layer disposed on a face of a second elastomeric carrier. The first and second carriers are stacked across a spacer such that the at least two adjacent electrically conductive leads faces the electrically resistive layer across a gap defined by the spacer. The gap is formed by a pocket between the carriers. The first carrier including the at least two adjacent electrically conductive leads and/or the second carrier including the electrically resistive layer are stretchable such as to upon receiving a force, exerted in a direction across the gap, reduce the gap between the electrically resistive layer and the at least two adjacent electrically conductive leads. Upon closing the gap the adjacent electrically conductive leads are shunted over a force dependent contact area and contact resistance. A gas in a gas confining structure between the carriers at least partly counteracts the exerted force.

Pressure sensor laminated onto a textile sheet, a method for manufacturing thereof, and a pressure distribution sensing product

A semiconductor device and a method for manufacturing such semiconductor device for use in a stacked configuration of the semiconductor device are disclosed. The semiconductor device includes a substrate including at least part of an electronic circuit provided at a first side thereof. The substrate includes a passivation layer and a substrate via that extends from the first side to a via depth such that it is reconfigurable into a through-substrate. The semiconductor device further includes a patterned masking layer on the first side of the substrate. The patterned masking layer includes a trench extending fully through the patterned masking layer. The trench has been filled with a redistribution conductor. The substrate via and the redistribution conductor include metal paste and together form one piece, such that there is no physical interface between the through-substrate via and the redistribution conductor. Thus, the parasitic resistance of this electrical connection is reduced.

Through-substrate via and redistribution layer with metal paste

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Geldrop, Netherlands

Maria Mathea Antonetta Burghoorn