Micron Technology Incorporated

Maria-Luisa Gallese

Violante Moschiano

Tommaso Vali

Luigi Pilolli

Umberto Siciliani

Mattia Cichocki

Giovanni Santin

Mauro Castelli

Luca De Santis

Walter Di-Francesco

Emanuele Sirizotti

Methods for providing redundancy in a memory include mapping a portion of first data associated with an address of the memory determined to indicate a defective memory cell to an address of a redundant area of the memory array, and writing second data to the memory array, wherein a portion of the second data is written to a column of the memory array associated with the address of the memory determined to indicate a defective memory cell for the first data. Apparatus include memory control circuitry configured to select a portion of data for mapping to a different address in response to an address indicating a defective memory cell, and further configured to select a different portion of data for a particular row than for a different row, wherein the particular row and the different row are associated with the same columns of the memory array.

Methods and apparatus for providing redundancy in memory

Memory devices may include digital-to-analog converters configured to convert digital values to analog read voltages and to apply the analog read voltages to memory cells in different memory planes, and multiplexers to selectively couple a corresponding table to a page buffer for output of a code from an identified code-containing row of the corresponding tables for each of the different memory planes, with each code corresponding to a data state of one of the memory cells.

Memory devices for reading memory cells of different memory planes

Methods for providing redundancy in a memory include mapping a portion of first data associated with an address of the memory determined to indicate a defective memory cell to an address of a redundant area of the memory array, and writing second data to the memory array, wherein a portion of the second data is written to a column of the memory array associated with the address of the memory determined to indicate a defective memory cell for the first data.

Methods for providing redundancy in a memory array comprising mapping portions of data associated with a defective address

In an embodiment, a first page of memory cells in a first memory plane is read concurrently with a second page of memory cells in a second memory plane. The second memory plane is different than the first memory plane, but is in the same memory array as the first memory plane. The second page of memory cells has a different page address than the first page of memory cells.

Concurrently reading first and second pages of memory cells having different page addresses

Methods and controllers for executing an instruction set are provided. In one such method, executing an instruction set includes executing an instruction of one type in the instruction set, executing a context switch instruction, and executing an instruction of a second type in the instruction set. in one such controller, a single machine executes instructions in an instruction set with instructions having an operational code, and instructions that do not have an operational code.

Memory controllers

The present disclosure includes apparatuses and methods related to a data interleaving module. A number of methods can include interleaving data received from a bus among modules according to a selected one of a plurality of data densities per memory cell supported by an apparatus and transferring the interleaved data from the modules to a register.

Growing community of inventors

Avezzano, Italy

Maria-Luisa Gallese