Asml Netherlands B.v.

Maria Isabel De La Fuente Valentin

Paul Christiaan Hinnen

Thomas Theeuwes

Anagnostis Tsiatmas

Shu-jin Wang

Elliott Gerard McNamara

Arie Jeffrey Den Boef

Mir Homayoun Shahrjerdy

Hugo Augustinus Joseph Cramer

Adriaan Johan Van Leest

Alok Verma

Mariya Vyacheslavivna Medvedyeva

Martijn Maria Zaal

Koen Van Witteveen

Bert Verstraeten

Thomai Zacharopoulou

Elliott Gerard Mc Namara

Satej Subhash Khedekar

Bastiaan Onne Fagginer Auer

Martijn Jongen

Giulio Bottegal

A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.

Method and apparatus to determine a patterning process parameter

A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.

A recipe selection method includes obtaining measurements from metrology targets, metrology targets positioned on a semiconductor substrate, obtaining measurements from in-device targets, in-device targets positioned on the semiconductor substrate, and determining a recipe for accurate metrology using both metrology target measurements and in-device metrology measurements.

Method of determining information about a patterning process, method of reducing error in measurement data, method of calibrating a metrology process, method of selecting metrology targets

Methods for processing data from a metrology process and for obtaining calibration data are disclosed. In one arrangement, measurement data is obtained from a metrology process. The metrology process includes illuminating a target on a substrate with measurement radiation and detecting radiation redirected by the target. The measurement data includes at least a component of a detected pupil representation of an optical characteristic of the redirected radiation in a pupil plane. The method further includes analyzing the at least a component of the detected pupil representation to determine either or both of a position property and a focus property of a radiation spot of the measurement radiation relative to the target.

Method of processing data, method of obtaining calibration data

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Eindhoven, Netherlands

Maria Isabel De La Fuente Valentin