Specmat Limited

Special Materials Research and Technology, Inc.

Cleveland State University

Special Materials Research and Technology, Inc. (specmat)

Maria Faur

Horia M Faur

Mircea Faur

Dennis J Flood

Sheila G Bailey

Gregory C Knight

David W Epperly

This present invention relates to a Room Temperature Wet Chemical Growth (RTWCG) formulations, methods and processes. In one embodiment, the present invention further relates to RTWCG formulations, methods and processes that utilize a low-[HF]. In another embodiment, the present invention relates to RTWCG formulations with improved bath life.

Low-[HF] room temperature wet chemical growth (RTWCG) chemical formulation

This disclosure relates to a Room Temperature Wet Chemical Growth (RTWCG) method and process of SiOX thin film coatings which can be grown on various substrates. The invention further relates to RTWCG method and process suited to grow thin films on the Si substrates used in the manufacture of silicon-based electronic and photonic (optoelectronic) device applications. The invention further relates to processes used to produce SiOX thin film layers for use as passivation layers, low reflectance layers, or high reflectance single layer coatings (SLARC) and selective emitters (SE).

Method, process and fabrication technology for oxide layers

Disclosed is a method, process, solar cell design, and fabrication technology fir high-efficiency, low-cost, crystalline silicon (Si) solar cells including but not restricted to solar grade single crystal Si (c-Si), multi-crystalline Si (mc-Si), poly-Si, and micro-Si solar cells and solar modules. The RTWCG solar cell fabrication technology creates a RTWCG SiOx thin film antireflection coating (ARC) with a graded index of refraction and a selective emitter (SE). The resulting top surface of the SiOx oxide can be textured (TO) concomitant with the growth process or through an additional mild wet chemical step.

Methods, process and fabrication technology for high-efficiency low-cost crystalline silicon solar cells

A semiconductor system includes a silicon substrate and a porous silicon region disposed on the silicon substrate. The porous silicon region is configured to passivate the surface of the silicon substrate via a field effect and to reduce reflection loss on the silicon substrate via an appropriate refractive index. The porous silicon region is manufactured by a stain etching process, which retrofits existing tools for junction isolation and Phosphorus Silicon Glass (PSG) etch in solar cell manufacturing. The retrofitted tools for junction isolation and PSG etch achieves multiple purposes in a single step, including etch-back, PSG etch, antireflection coating, and passivation of the front surface of the solar cell.

Silicon-containing semiconductor structures, methods of making the same and devices including the same

A method of passivating semiconductor devices using existing tools of junction isolation and phosphosilicate glass (PSG)/borosilicate glass (BSG) etch via room temperature wet chemical growth (RTWCG) processes is provided. Back side processing of the semiconductor device achieves passivation and junction isolation in a single step, while front side processing achieves passivation, PSG/BSG etch, anti-reflection coating and potential induced degradation (PID) mitigation simultaneously. A modified solar cell fabrication method is then provided by integrating the passivation formation method into conventional solar cell manufacturing systems. The resulting solar cells comprise a semiconductor substrate having a front surface and a back surface. The front surface is coated with a SiOx layer less than 50 nm thick, over which a SiNx layer is deposited. On the back surface, another SiOx layer is coated. Experimental data shows high efficiency and mitigated PID of the solar cells.

Methods, apparatus, and systems for passivation of solar cells and other semiconductor devices

Disclosed is a method, process, solar cell design, and fabrication technology for high-efficiency, low-cost, crystalline silicon (Si) solar cells including but not restricted to solar grade single crystal Si (c-Si), multi-crystalline Si (mc-Si), poly-Si, and micro-Si solar cells and solar modules. The RTWCG solar cell fabrication technology creates a RTWCG SiOx thin film antireflection coating (ARC) with a graded index of refraction and a selective emitter (SE). The resulting top surface of the SiOx oxide can be textured (TO) concomitant with the growth process or through an additional mild wet chemical step.

Compositions to facilitate room temperature growth of an oxide layer on a substrate

Disclosed is a method for making low metallic impurity SiO-based dielectric thin films on semiconductor substrates using a room temperature wet chemical growth (RTWCG) process for electronic and photonic (optoelectronic) device applications. The process comprises soaking the semiconductor substrate into the growth solution. The process utilizes a mixture of aqueous inorganic or organic based silicon source solution, an inorganic reduction oxidation (redox) aqueous solution, non-invasive inorganic or organic based liquid additives for adjusting the growth rate and reducing the metallic impurity concentration within the SiO-based film, with or without an electron exchange pyridine based component, and an inorganic homogeneous catalyst for enhancing the growth of the SiO-based film.

Low metallic impurity SiO based thin film dielectrics on semiconductor substrates using a room temperature wet chemical growth process, method and applications thereof

Disclosed is a room temperature wet chemical growth (RTWCG) process of SiO-based insulator coatings on silicon substrates for electronic and photonic (optoelectronic) device applications. The process utilizes a mixture of a silicon source, a pyridinium compound, an aqueous redox solution, and a homogeneous aqueous solution.

Method of making thin films dielectrics using a process for room temperature wet chemical growth of SiO based oxides on a substrate

This invention refers to a removal and recovery method of pollutant materials. A waste stream source of polluted water and/or waste gases containing waste acids, bases and salts, and/or waste air pollutant suspension particles are fed into a separation reactor. The combined physicochemical effects of removal/recovery of pollutants inside the reactor take place by solubilization, ionization, reaction, deposition and settling, which concurrently remove and separate the pollutants as solid materials, deposited on selective electrodes sets, as gases and as sludge and/or precipitates. The reactor is kept at the working temperature using a waste industrial heat, and the separation processes take place by applying a voltage source between a spaced apart system of selective electrodes, and by using a ionizing source of waste spent fuel nuclear bars or electromagnetic radiation.

Method for the removal and recovery of inorganic pollutants from waste aqueous solutions and waste primary air sources

Disclosed is a room temperature wet chemical growth (RTWCG) process of SiO-based insulator coatings on silicon substrates for electronic and photonic (optoelectronic) device applications. The process includes soaking the Si substrates into the growth solution. The process utilizes a mixture of H.sub.2 SiF.sub.6, N-n-butylpyridinium chloride, redox Fe.sup.2+ /Fe.sup.3+ aqueous solutions, and a homogeneous catalyst.

Room temperature wet chemical growth process of SiO based oxides on

A water purification method and apparatus is described which distills a contaminated water supply having contaminants dissolved therein with electrically powered spaced apart immersion electrodes. When connected to a source of alternating electrical current, the electrode members cooperate to distill water by heating while concurrently removing the contaminants as solid precipitates in the contaminated remaining water.

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North Olmsted, OH, United States of America

Maria Faur