Fujitsu Corporation

Advanced Micro Devices Corporation

Maria Chow-Chan

Hao Fang

Yue-Song He

Narbeh Derhacobian

Kent Kuohua Chang

Masaaki Higashitani

Kelwin Ko

Bill Cox

This invention describes methods for producing gate oxide regions in periphery regions of semiconductor chips, wherein the gate oxide regions have improved electrical properties. The methods involve the deposition of a barrier layer over the periphery of the semiconductor chip to prevent the introduction of contaminating nitrogen atoms into the periphery during a nitridation step in the core region of the semiconductor chip. By preventing the contamination of the gate areas of the periphery, the gate oxide regions so produced have increased breakdown voltages and increased reliability. This invention describes methods for etching the barrier layers used to protect the periphery from tunnel oxide nitridation. Semiconductor devices made with the methods of this invention have longer expected lifetimes and can be manufactured with higher device density.

Barrier layer decreases nitrogen contamination of peripheral gate

Growing community of inventors

San Jose, CA, United States of America

Maria Chow-Chan