Canon Kabushiki Kaisha

Mari Isobe

Yasuhiro Sekine

Masatsugu Itahashi

Sho Suzuki

Shunsuke Nakatsuka

Kentaro Suzuki

A semiconductor apparatus comprises first and second semiconductor component having first and second metal pads, respectively. The first and second semiconductor components are stacked on each other to be bonded to each other at a bonding face. In a plane including the bonding face, first and second ranges each having a circular contour with a diameter of 10 &#x3bc;m or more are definable. None of bonded portions is provided inside of each of the first and second ranges. At least a part of the bonded portions is located between the first and second ranges. The bonded portions are disposed between the first and second ranges such that any straight line passing through the first and second ranges and parallel to a direction connecting centers of the first and second ranges intersects at least one bonded portion of the bonded portions.

Semiconductor apparatus and semiconductor wafer

A manufacturing method of a solid state imaging device according to one embodiment includes the steps of forming, on a substrate, a gate electrode of a first transistor and a gate electrode of a second transistor adjacent to the first transistor; forming an insulator film covering the gate electrode of the first transistor and the gate electrode of the second transistor such that a void is formed between the gate electrode of the first transistor and the gate electrode of the second transistor; forming a film on the insulator film; and forming a light shielding member by removing a part of the film by an etching.

Solid state imaging device, manufacturing method of solid state imaging device, and imaging system

A method for manufacturing a solid-state image pickup apparatus includes forming a first insulating film over a substrate after forming a gate electrode of a first transfer transistor and a gate electrode of a second transfer transistor, forming a second insulating film on the first insulating film, forming a first structure and a second structure on side surfaces of the gate electrodes of the first and second transfer transistors, respectively, via the first insulating film by etching the second insulating film in such a manner that the first insulating film remains on a semiconductor region of a photoelectric conversion unit and a semiconductor region of a charge holding unit, and forming a light shielding film that covers the gate electrode of the first transfer transistor, the semiconductor region of the charge holding unit, and the gate electrode of the second transfer transistor.

Growing community of inventors

Kawasaki, Japan

Mari Isobe