Kabushiki Kaisha Toshiba

Other

Mari Inoue

Soichi Inoue

Satoshi Tanaka

Shinji Yamaguchi

A mask defect inspecting method comprises preparing detection sensitivities of defects on a plurality of portions of a mask pattern on a photomask, the detection sensitivities being determined according to influences of the defects upon a wafer, and inspecting defects on the plurality of portions based on the detection sensitivities.

Mask defect inspection computer program product

Mask defect inspecting method, semiconductor device manufacturing method, mask defect inspecting apparatus, defect influence map generating method, and computer program product

A photomask evaluating method comprises calculating a killer defect rate function with respect to a simulative defect pattern including a pattern of photomask and a plurality of defects, the killer defect rate function representing a killer defect rate of the simulative defect pattern with respect to a desired density of the pattern and a desired size of the plurality of defects, calculating the number of killer defects in an inspection region of the photomask based on an area of the photomask inspection region, a pattern density in the inspection region, the killer defect rate function and a defect size distribution representing the number of defects per unit area to a defect size range acquired from a photomask manufacturing step, and evaluating the photomask based on the calculated number of the killer defects.

Mask evaluating method, mask evaluating system, method of manufacturing mask and computer program product

Disclosed is a method of manufacturing a photomask, comprising calculating a pattern area ratio, which is a ratio of the light transmitting pattern portion or the light shielding pattern portion to an area of the photomask from the design data of a given layout pattern of the photomask, and a pattern density, which is a ratio of the light transmitting pattern portion or light shielding pattern portion within the region to the area of the region extracted from the given layout pattern, estimating from the calculated pattern area ratio and the pattern density the size of a pattern formed in the case where the pattern is formed on the photomask by using the design data of the given layout pattern, and imparting the amount of correction to the design data of the given layout pattern based on the estimated pattern size.

Method for correcting a design data of a layout pattern of a photomask, photomask manufactured by said method, and semiconductor device method using said photomask

Growing community of inventors

Yokohama, Japan

Mari Inoue