Lattice Semiconductor Corporation

Margaret Tait

Hemanshu T Vernenker

Allen White

Christopher Hume

Sam Tsai

Nhon Nguyen

Tim Swensen

Steve Eplett

John Schadt

Harold Scholz

Larry Fenstermaker

Gregory S Cartney

Systems and methods disclosed herein provide for variable data width memory. For example, in accordance with an embodiment of the present invention, a technique for doubling a width of a memory is disclosed, without having to increase a width of the internal data path or the number of input/output pads.

Variable data width memory systems and methods

A multiport memory in one embodiment of the invention includes a memory cell array, where each column in the array has two exterior complementary bitline pairs and zero, one, or more interior complementary bitline pairs. Across each pair of adjacent columns in the array, the adjacent exterior bitline pairs are associated with the same port in the multiport memory. In addition, within each column, the two exterior bitline pairs have the same, non-zero number of crossovers, and, across each pair of adjacent columns, the exterior bitline pairs have different numbers of crossovers. Furthermore, each column has at least one reference signal line located between the two exterior bitline pairs.

Bitline twisting scheme for multiport memory

Systems and methods are disclosed herein to provide techniques for writing to certain bits of a word location in a memory. For example, in accordance with an embodiment of the present invention, a method of implementing byte enable logic for a memory is disclosed, with the byte enable logic signals provided on one or more address lines.

Byte enable logic for memory

In accordance with an embodiment of the present invention, a programmable logic device includes a plurality of logic blocks, a plurality of memory blocks, and a plurality of continuation routing paths associated with the memory blocks. A plurality of continuation multiplexers, coupled to the continuation routing paths, are adapted to route signals between the memory blocks, between the logic blocks, and/or between the memory blocks and the logic blocks.

Cascadable memory

Systems and methods provide sense amplifier timing techniques. For example, in accordance with an embodiment of the present invention, an integrated circuit includes a plurality of memory cells and a sense amplifier that provides a sense amplifier output signal based on data provided by the plurality of memory cells, with the sense amplifier output signal provided under control of a sense amplifier enable signal. A delay control circuit provides a delay to the sense amplifier enable signal based on a value provided by at least one configuration fuse.

Sense amplifier timing

Systems and methods provide output data from a memory. For example, in accordance with an embodiment of the present invention, techniques are disclosed for providing glitch-free output data from a memory through feedback of the output data signal.

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Austin, TX, United States of America

Margaret Tait