Power Integrations, Inc.

Velox Semiconductor Corporation

Marek Pabisz

Ting Gang Zhu

LinLin Liu

Michael Murphy

Milan Pophristic

Bryan S Shelton

Richard A Stall

Mark Gottfried

TingGang Zhu

A Schottky contact is disposed atop the surface of the semiconductor. A first Schottky contact metal layer is disposed atop a first portion of the semiconductor surface. A second Schottky contact metal is disposed atop a second portion of the surface layer and joins the first Schottky contact metal layer. A first. Schottky contact metal layer has a lower work function than the second Schottky contact metal layer.

Second Schottky contact metal layer to improve GaN schottky diode performance

A Schottky diode includes a first nitride-based semiconductor layer disposed atop a substrate. A second nitride-based semiconductor layer is disposed atop a portion of the first nitride-based semiconductor layer. The second layer has a doping concentration lower than that of the first layer. A first Schottky contact metal layer having a first metal work function is disposed on a top planar surface of the second layer, forming a first Schottky junction. A second Schottky contact metal layer having a second metal work function is disposed atop of and laterally surrounding the first Schottky contact metal layer, the metal work function of the second metal layer is higher than that of the first metal layer. A metal layer disposed on first and second planar surfaces forms an ohmic contact with the first nitride-based semiconductor layer.

Second contact schottky metal layer to improve GaN schottky diode performance

A Schottky contact is disposed atop a surface of a semiconductor. A first Schottky contact metal layer is disposed atop a first portion of the semiconductor surface. A second Schottky contact metal is disposed atop a second portion of the surface layer and adjoins the first Schottky contact metal layer. The first Schottky contact metal layer has a lower work function than the second Schottky contact metal layer.

Second Schottky contact metal layer to improve GaN Schottky diode performance

A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n&#x2212; doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n&#x2212; doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.

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Quakertown, PA, United States of America

Marek Pabisz