Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Marcus Zenger

Mathias Wendt

Barbara Behr

Simeon Katz

Sophia Huppmann

Andreas Ploessl

Dominik Scholz

Andreas Weimar

Jens Mueller

Paola Altieri-Weimar

Ingo Neudecker

Georg Hartung

A method for producing a connection between component parts and a component made of component parts are disclosed. In an embodiment, a includes providing a first component part having a first exposed insulation layer and a second component part having a second exposed insulation layer, wherein each of the insulation layers has at least one opening, joining together the first and second component parts such that the opening of the first insulation layer and the opening of the second insulation layer overlap in top view, wherein an Au layer and a Sn layer are arranged one above the other in at least one of the openings and melting the Au layer and the Sn layer to form an AuSn alloy, wherein the AuSn alloy forms a through-via after cooling electrically conductively connecting the first component part to the second component part.

Method for producing a connection between component parts, and component made of component parts

A component may include a semiconductor chip, a buffer layer, a connecting layer, and a metal carrier. The semiconductor chip may include a substrate and a semiconductor body arranged thereon. The metal carrier may have a thermal expansion coefficient at least 1.5 times as great as a thermal expansion coefficient of the substrate or of the semiconductor chip. The chip may be fastened on the metal carrier by the connecting layer, and the buffer layer may have a yield stress ranging from 10 MPa. The buffer layer may have a thickness ranging from 2 um to 10 um and adjoin the chip. The substrate and the metal carrier may have a higher yield strength than the buffer layer.

Component having a buffer layer and method for producing a component

An optoelectronic device () comprising a semiconductor body () having an optically active region (), a carrier (), and a pair of connection layers () having a first connection layer () and a second connection layer (), wherein:

Optoelectronic component and method for producing an optoelectronic component

A method for producing a plurality of components and a component are disclosed. In an embodiment the method includes providing a carrier composite comprising a base body and a planar connecting surface, providing a wafer composite comprising a semiconductor body composite and a planar contact surface, connecting the wafer composite to the carrier composite thereby forming a joint composite so that the planar contact surface and the planar connecting surface are joined forming a joint boundary surface. The method further includes reducing inner mechanical stress in the joint composite so that a material of the carrier composite is removed in places, wherein the joint composite is thermally treated in order to form a permanent mechanically-stable connection between the wafer composite and the carrier composite, and wherein reducing inner stress is effected prior to the thermal treatment.

Method for producing a plurality of components, and component

A device and a method for producing a device are disclosed. In an embodiment the device includes a first component; a second component; and a connecting element arranged between the first component and the second component, wherein the connecting element comprises at least a first phase and a second phase, wherein the first phase comprises a first metal having a first concentration, a second metal having a second concentration and a third metal having a third concentration, wherein the second phase comprises the first metal having a fourth concentration, the second metal and the third metal, wherein the first metal, the second metal and the third metal are different from one another and are suitable for reacting at a processing temperature of less than 200&#xb0; C., and wherein the following applies: c11&#x2265;c25 and c11&#x2265;c13&#x2265;c12.

Device and method for producing a device

A device and a method for producing a device are disclosed. In an embodiment the device includes a first component, a second component and a connecting element directly arranged between the first component and the second component, wherein the connecting element includes at least a first metal, which is formed as an adhesive layer, a diffusion barrier and a component of a first phase and a second phase of the connecting element, wherein the adhesive layer is arranged on the first component and/or the second component, wherein the first phase and/or the second phase includes, besides the first metal, further metals different from the first metal, wherein a concentration of the first metal in the first phase is greater than a concentration of the first metal in the second phase, and wherein the connecting element includes a layer of a silicide of the first metal.

A device is specified, said device comprising a first component (), a second component (), and a connecting component () comprising at least a first region () and at least a second region (). The composition of the first region () differs from the composition of the second region (). The connecting component () is arranged between the first component () and the second component (). The connecting component () comprises different kinds of metals, the first region () of the connecting component () comprises a first metal (), and the concentration of the first metal () is greater in the first region () than the concentration of the first metal () in the second region ().

Device comprising a connecting component and method for producing a connecting component

An optoelectronic component comprising a semiconductor body, a first connection layer, an insulation layer and a second connection layer, wherein the semiconductor body has an active region for generating electromagnetic radiation and the second connection layer comprises a first partial layer and a second partial layer is specified, wherein

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Hausen, Germany

Marcus Zenger