Freescale Semiconductor,inc.

Motorola Corporation

Marcus R Ray

Matthias Passlack

Darrell Glenn Hill

Olin L Hartin

Lianjun Liu

Mariam G Sadaka

Bruce McRae Green

Jonathan K Abrokwah

Charles E Weitzel

Nicholas W Medendorp

Monte Gene Miller

Ellen Y Lan

Ricardo A Uscola

Philip Li

A transceiver includes a harmonic termination circuit that receives a tunable harmonic voltage from a power amplifier control. The harmonic termination circuit includes a variable capacitor that is capable of adjusting its capacitance in response to the tunable harmonic termination voltage to achieve at least two modes of operation. The at least two modes of operation may be EDGE mode and GSM mode. In this embodiment, the harmonic termination circuit allows for linearity specifications of EDGE to be met, while not degrading the efficiency of the transceiver when operating in GSM mode. In one embodiment, the harmonic termination circuit further includes an inductive element in series with the variable capacitor.

Multi-mode transceiver having tunable harmonic termination circuit and method therefor

A radio frequency ('RF') circuit configured in accordance with an embodiment of the invention is fabricated on a substrate using integrated passive device ('IPD') process technology. The RF circuit includes at least one RF signal line section and an integrated RF coupler located proximate to the RF signal line section. The integrated RF coupler, its output and grounding contact pads, and its matching network are fabricated on the same substrate using the same IPD process technology. The integrated RF coupler provides efficient and reproducible RF coupling without increasing the die footprint of the RF circuit.

Radio frequency circuit with integrated on-chip radio frequency signal coupler

In one embodiment, a semiconductor device () includes a buffer layer () formed over a substrate (). An AlGaAs layer () is formed over the buffer layer () and has a first doped region () formed therein. An InGaAs channel layer () is formed over the AlGaAs layer (). An AlGaAs layer () is formed over the InGaAs channel layer (), and the AlGaAs layer () has a second doped region formed therein. A GaAs layer () having a first recess is formed over the AlGaAs layer (). A control electrode () is formed over the AlGaAs layer (). A doped GaAs layer () is formed over the undoped GaAs layer () and on opposite sides of the control electrode () and provides first and second current electrodes. When used to amplify a digital modulation signal, the semiconductor device () maintains linear operation over a wide temperature range.

pHEMT with barrier optimized for low temperature operation

An implant-free enhancement mode metal-oxide semiconductor field effect transistor (EMOSFET) is provided. The EMOSFET has a III-V compound semiconductor substrate and an epitaxial layer structure overlying the III-V compound semiconductor substrate. The epitaxial material layer has a channel layer and at least one doped layer. A gate oxide layer overlies the epitaxial layer structure. The EMOSFET further includes a metal gate electrode overlying the gate oxide layer and source and drain ohmic contacts overlying the epitaxial layer structure.

Enhancement mode metal-oxide-semiconductor field effect transistor

A semiconductor component includes: a semiconductor substrate (); an epitaxial semiconductor layer () above the semiconductor substrate; a bipolar transistor () in the epitaxial semiconductor layer; and a field effect transistor () in the epitaxial semiconductor layer. A portion of the epitaxial semiconductor layer forms a base of the bipolar transistor and a gate of the field effect transistor, and the portion of the epitaxial semiconductor layer has a substantially uniform doping concentration. In the same or another embodiment, a different portion of the epitaxial semiconductor layer forms an emitter of the bipolar transistor and a channel of the field effect transistor, and the different portion of the epitaxial semiconductor layer has a substantially uniform doping concentration that can be the same as or different from the substantially uniform doping concentration of the portion of the epitaxial semiconductor layer.

Heterojunction bipolar transistor with monolithically integrated junction field effect transistor and method of manufacturing same

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Tempe, AZ, United States of America

Marcus R Ray