Infineon Technologies Ag

Qimonda Ag

H. C. Starck, Gmbh & Co Kg

Hueck Folien Gesellschaft M.b.h.

Marcus Halik

Hagen Klauk

Ute Zschieschang

Günter Schmid

Guenter Schmid

Andreas Walter

Thomas Mikolajick

Christine Dehm

Thomas Peter Haneder

Recai Sezi

Franz Effenberger

Florian Eder

Klaus Lowack

G&uuml;nter Schmid

Stefan Braun

Efstratios Terzoglu

Stephan Kirchmeyer

Wolfgang Clemens

Anna Maltenberger

Reimund Engl

Henning Rost

Adolf Bernds

Frank Buckel

Martin Bergsmann

Sergei A Ponomarenko

Roland Treutlein

Matthias Müller

Axel Gerlt

Markus Schutz

Sezi Recai

Holger H&ouml;sch

Roland Haasmann

Katja Steffen

Steffen Seifritz

Steffen Maisch

Elena Mean-Osteritz

Peter Baeuerle

An embodiment of the invention provides an integrated circuit having an organic field effect transistor (OFET) with a dielectric layer. The dielectric layer is prepared from a polymer formulation comprising: about 100 parts of at least one crosslinkable base polymer, from about 10 to about 20 parts of at least one di- or tribenzyl alcohol compound as an electrophilic crosslinking component, from about 0.2 to about 10 parts of at least one photo acid generator, and at least one solvent. Another embodiment provides a semiconductor fabrication method. The method comprises applying the polymer formulation to a surface of a substrate, drying the polymer formulation, crosslinking the polymer formulation after drying, and baking the polymer formulation after crosslinking.

Integrated circuit comprising an organic semiconductor, and method for the production of an integrated circuit

A device for the storage of at least one of solid, liquid or gaseous objects. The device including at least one compartment that is configured to contain at least one object. The filling or emptying of the compartment triggers an electrically-readable signal. In one embodiment, the compartment may be mechanically modified and an electrically-readable signal is generated based on a corresponding mechanical change to the compartment. An electrical data memory with at least one memory cell is integrated into the device. The memory cell is assigned to the compartment. The memory cell is configured to adopt a value corresponding to the mechanical change to the compartment. The device also includes an analytical circuit for reading the data memory.

Device for the storage of solid and/or liquid and/or gaseous objects

Materials are described for producing memory cells which have a size in the nanometer range and include a CT complex located between two electrodes. The CT complex includes thiophene derivatives, pyrrole derivatives or phthalocyanines together with naphthalenetetracarboxylic acid, dianhydrides, diamides, fullerenes or perylene compounds.

Charge transfer complexes including an electron donor and an electron acceptor as basis of resistive memories

Polymers are described which exhibit a resistive hysteresis effect. The polymers include a polymer backbone to which pentaarylcyclopentadienyl radicals are bonded as side groups. A resistive memory element is formed that includes the polymer as a storage medium. By applying a voltage, the memory element can be switched between a nonconductive and a conductive state.

Pentaarylcyclopentadienyl units as active units in resistive memory elements

A method for fabricating an organic conductor path on a substrate includes providing a printing stamp with a hydrophobic patterned printing side that is loaded with a printing medium containing an organic conductive polymer and, by bringing it into contact with a hydrophilic substrate, a patterned layer including the organic polymer are formed on the substrate. The method can be operated continuously through selection of suitable geometries for the printing stamp and the substrate.

Fabrication of organic electronic circuits by contact printing techniques

A method for through-plating field effect transistors with a self-assembled monolayer of an organic compound as gate dielectric includes through-plating by patterning a gate electrode material, and bringing an organic compound having dielectric properties into contact with the contact hole material and the gate electrode material. A contact hole material and the gate electrode material are at least partially uncovered. The contact hole is material not identical to the gate electrode material. A self-assembled monolayer of the organic compound is formed above the gate electrode material. The method also includes depositing and patterning the source and drain contacts without removing the self-assembled monolayer of the organic compound, and depositing a semiconductor material.

Method for through-plating field effect transistors with a self-assembled monolayer of an organic compound as gate dielectric

An embodiment of the invention provides a method for the treatment of a substrate made of paper or a substrate containing paper as support material for a semiconductor component. In an embodiment, the substrate surface is contacted with a solution comprising at least one phenol-containing base polymer and/or copolymer and a crosslinker component. A polymer formulation deposits from the solution onto the surface. The solution may further include an acid catalyst. Embodiments include a semiconductor component formed according to the method of the invention.

Solution and method for the treatment of a substrate, and semiconductor component

The gate dielectric layer of a thin film field effect transistor is formed as a multilayer layer system having at least one self assembling molecular monolayer (SAM) and a dielectric polymer layer made of an insulating polymer. With comparatively small layer thicknesses of 10 to 50 nanometers, the multilayer gate dielectric layer ensures low leakage currents and enables failsafe operation of the thin film field effect transistor at low supply voltages of less than 5 volts. The gate dielectric layer is robust toward voltages of up to approximately 20 volts and permits the use of a multiplicity of different materials for realizing an underlying electrode.

Thin film field effect transistor with gate dielectric made of organic material and method for fabricating the same

A semiconductor component has at least one organic semiconductor layer. The component also includes at least one protective layer for at least partially covering the at least one organic semiconductor layer to protect against environmental influences. The at least one protective layer contains a proportion of an alkane with CHand n greater than or equal to 15 or consists entirely of an alkane of this type, or of a mixture of alkanes of this type. In one example, the protective layer is a paraffin wax. This creates a high resistance to moisture.

Semiconductor component having at least one organic semiconductor layer and method for fabricating the same

Embodiments of the invention provide a semiconductor component and a method of manufacture thereof. A semiconductor component comprises: a gate electrode layer adjacent a substrate, and a gate dielectric layer adjacent the gate electrode layer. The gate dielectric layer comprises a monolayer of at least one compound, wherein the compound has an aromatic or a condensed aromatic molecular group. The molecular group is capable of &#x3c0;-&#x3c0; interactions, which stabilize the monolayer. In an embodiment, the semiconductor component is an organic field effect transistor (OFET). In an embodiment of the invention, a method includes forming the monolayer using a liquid phase immersion process.

Compound used to form a self-assembled monolayer, layer structure, semiconductor component having a layer structure, and method for producing a layer structure

A laminate is formed from a carrier layer and an electrically conductive layer. In one section, the conductive layer is formed into an antenna structure. The laminate is formed by placing a mask onto a packaging film and vapor-depositing aluminum onto the packaging film and the mask. After removal of the mask, only a desired antenna structure remains on a section of the packaging film. Then a microchip, is adhesively bonded to the packaging film and conductively connected to an end of the antenna structure, so that data can be written in or read out without contact in a wireless transponder system.

Method for manufacturing a packaging material in the form of a laminate with an electrically conductive layer formed as an antenna structure

In the case of the materials according to the invention, the charge carrier mobility in the correspondingly prepared films is achieved if the molecules are composed in such a way that side chains&#x2014;consisting of conjugated aromatic or heteroaromatic systems&#x2014;are attached in direct conjugation to a central aromatic or heteroaromatic ring so that the total molecule acquires an octupolar structure. This octupolar structure permits an effective &#x3c0;-&#x3c0; interaction of the molecules with one another in a manner such that stacking of a plurality of molecules along an imaginary axis (central ring) can take place and various stacks from among these stacks can interact with one another by intermeshing of the side chains. The electronic properties of the materials are determined both by the arrangement of the molecules in a layer and by the molecular design. The type of side chains and of the central ring which is electronically coupled to the side chains and ideally reinforces the effects in comparison with side chains considered in isolation is important for this purpose.

Octupolar molecules used as organic semiconductors

A dielectric for aluminum and copper metalizations is stable at high temperatures. Surprisingly, in spite of the elimination of water during the cyclization, the polymeric dielectrics are very suitable for filling narrow trenches. The filled trenches exhibit no defects and bubbles or cracks. The polybenzoxazoles have dielectric constants of k&#x2266;2.7 and are suitable as an electrical insulator. Furthermore, these materials adhere very well on all surfaces relevant for micro-electronics.

Poly-o-hydroxyamide, polybenzoxazole from the poly-o-hydroxyamide, electronic component including a polybenzoxazole, and processes for producing the same

A method for fabricating a field effect transistor, in which, after the etching of the gate electrode, the removal of the etching mask is omitted since the etching mask serves as a gate dielectric. The etching mask or the dielectric has a self-assembled monolayer of an organic compound.

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Erlangen, Germany

Marcus Halik