Osram Oled Gmbh

Osram Opto Semiconductors Gmbh

Marcus Eichfelder

Joachim Hertkorn

Alexander Walter

Thomas Lehnhardt

Jan-Philipp Ahl

A semiconductor body is disclosed. In an embodiment a semiconductor body includes an n-doped region comprising a first layer sequence comprising pairs of alternating layers, wherein a first layer and a second layer of each pair differ in their doping concentration, and wherein the first and second layers of each pair have the same material composition except for their doping and a second layer sequence comprising pairs of alternating layers, wherein a first layer and a second layer of each pair differ in their material composition, an active region, wherein the second layer sequence is disposed between the first layer sequence and the active region and a p-doped region, wherein the active region is disposed between the n-doped region and the p-doped region.

Semiconductor body

A semiconductor body is disclosed. In an embodiment a semiconductor body includes a p-doped region, an active region, an intermediate layer and a layer stack containing indium, wherein an indium concentration in the layer stack changes along a stacking direction, wherein the layer stack is formed with exactly one nitride compound semiconductor material apart from dopants, wherein the intermediate layer is nominally free of indium, arranged between the layer stack and the active region, and directly adjoins the layer stack, wherein the intermediate layer and/or the layer stack are n-doped at least in places, wherein a dopant concentration of the layer stack is at least 5*101/cmand at most 2*101/cm, and wherein a dopant concentration of the intermediate layer is at least 2*101/cmand at most 3*101/cm.

In at least one embodiment, the method is designed to produce an active zone for an optoelectronic semiconductor chip and comprises the following steps: growing a fourth barrier layer () based on AlInGaN where 0&#x2266;x4&#x2266;0.40 and on average 0&#x3c;y4&#x2266;0.4, wherein the In content increases along a growth direction (z), growing a quantum well layer () on the fourth barrier layer (), wherein the quantum well layer () is based on InGaN where 0.08&#x2266;y&#x2266;0.35, growing a first barrier layer () based on AlInGaN where 0&#x2266;x1&#x2266;0.40 and on average 0&#x3c;y1&#x2266;0.4 onto the quantum well layer (), wherein the In content decreases along the growth direction (z), growing a second barrier layer () based on GaN onto the first barrier layer (), and growing a third barrier layer () based on GaN onto the second barrier layer (), wherein the third barrier layer () is grown with the addition of Hgas.

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Wuppertal, Germany

Marcus Eichfelder