Robert Boschgmbh

Dritte Patentportfolio Beteiligungsgesellschaft Mbh &co. Kg

Marcus Ahles

Hubert Benzel

Simon Armbruster

Jochen Reinmuth

Heribert Weber

Michael Roth

Torsten Kramer

Harald Guenschel

Roland Schmechel

Janine Riedrich-Moeller

Heinz Von Seggern

Gregor Schuermann

Kathrin Knese

Andreas Haeffelin

Armin Grundmann

Matthias Rehahn

A semiconductor sensor includes a cavity; a fluid connection between the cavity and an inlet area; a pump diaphragm that bounds the cavity; and a measuring diaphragm that bounds the cavity. The fluid connection includes a diffusion channel having multiple openings in the inlet area or multiple diffusion channels having respectively an opening in the inlet area, and it is possible to close at least one of the openings using laser light in order to influence an effective length or an effective cross section of the fluid connection.

Semiconductor sensor for gas concentration

A component having a via includes: (i) a first layer having a first via portion, a first trench structure, and a first surrounding layer portion, the first via portion being separated by the first trench structure from the first surrounding layer portion; (ii) a second layer having a second via portion, a second trench structure, and a second surrounding layer portion, the second via portion being separated by the second trench structure from the second surrounding layer portion; (iii) an insulation layer disposed between the first and the second layer, the insulation layer having an opening so that the first and the second via portions of the first and the second layers are directly connected to one another in the region of the opening. The first via portion and the second surrounding layer portion at least partially overlap.

Component having a via

A method for manufacturing a micromechanical diaphragm structure having access from the rear of the substrate includes: n-doping at least one contiguous lattice-type area of a p-doped silicon substrate surface; porously etching a substrate area beneath the n-doped lattice structure; producing a cavity in this substrate area beneath the n-doped lattice structure; growing a first monocrystalline silicon epitaxial layer on the n-doped lattice structure; at least one opening in the n-doped lattice structure being dimensioned in such a way that it is not closed by the growing first epitaxial layer but instead forms an access opening to the cavity; an oxide layer being created on the cavity wall; a rear access to the cavity being created, the oxide layer on the cavity wall acting as an etch stop layer; and the oxide layer being removed in the area of the cavity.

Method for manufacturing a micromechanical diaphragm structure having access from the rear of the substrate

A sensor system, e.g., a pressure sensor system, includes a substrate having at least one trench on a first side. The trench is provided for forming a first diaphragm region on a second side opposite from the first side. In addition, a second diaphragm region and a cavern are integrated into the material of the first diaphragm region.

Sensor system, method for operating a sensor system, and method for manufacturing a sensor system

A very robust sensor element for an absolute-pressure measurement is described, which is suitable for high temperatures and able to be miniaturized to a large extent. The micromechanical pressure-sensor element includes a sensor diaphragm having a rear-side pressure connection and at least one dielectrically insulated piezo resistor for signal acquisition. Furthermore, the pressure-sensor element has a front-side reference volume, which is sealed by a cap structure spanning the sensor diaphragm. The cap structure is realized as thin-film structure.

Micromechanical pressure-sensor element and method for its production

Described are oligotetracenes of formula I which may either be unsubstituted or carry one or more substituents R and R' which are selected from the group comprising Also described is a method for preparing the referenced oligotetracenes, and use thereof as semiconductors in organic field-effect transistors (OFET's), organic light-emitting diodes (OLED's), sensors, and organic solar cells.

Oligo-tetracenes, production and use thereof

A sensor system, in particular a pressure sensor system, having a substrate having a main extension plane, the substrate having at least one trench on a first side, and the trench being provided to produce a diaphragm area on a second side of the substrate diametrically opposite to the first side perpendicularly to the main extension plane, and a decoupling element further being integrated in the material of the diaphragm area.

Growing community of inventors

Pfullingen, Germany

Marcus Ahles