Asml Netherlands B.v.

Asml Holding N.v.

Carl Zeiss Smt Gmbh

Marcus Adrianus Van De Kerkhof

Timotheus Franciscus Sengers

Mark Kroon

Pieter-Jan Van Zwol

Erik Roelof Loopstra

Arie Jeffrey Den Boef

Hans Butler

Jeroen Johannes Sophia Maria Mertens

Maurits Van Der Schaar

Bearrach Moest

David Ferdinand Vles

Willem Joan Van Der Zande

Sjoerd Nicolaas Lambertus Donders

Johannes Catharinus Hubertus Mulkens

Christiaan Alexander Hoogendam

Bob Streefkerk

Joost Jeroen Ottens

Joeri Lof

Helmar Van Santen

Alexander Straaijer

Klaus Simon

Joannes Theodoor De Smit

Hendricus Johannes Maria Meijer

Haico Victor Kok

Paul Janssen

Erik Theodorus Maria Bijlaart

Arnoud Willem Notenboom

Mária Péter

Derk Servatius Gertruda Brouns

Frank Van Schaik

Aleksey Yurievich Kolesnychenko

Roelof Aeilko Siebrand Ritsema

Andrey Alexandrovich Nikipelov

Maxim Aleksandrovich Nasalevich

Willem-Pieter Voorthuijzen

Johannes Petrus Martinus Bernardus Vermeulen

Franciscus Johannes Joseph Janssen

Ivo Adam Johannes Thomas

Marcel Beckers

Siebe Landheer

Johannes Jacobus Matheus Baselmans

Johannes Hubertus Josephina Moors

Tammo Uitterdijk

James Norman Wiley

Pradeep Kumar Govil

Laurentius Cornelius De Winter

Wilhelmus Petrus De Boeij

Matthias Kruizinga

Andreas Fuchs

Johannes Henricus Wilhelmus Jacobs

Hugo Augustinus Joseph Cramer

Koen Jacobus Johannes Maria Zaal

Marc Wilhelmus Maria Van Der Wijst

Borgert Kruizinga

Anton Bernhard Van Oosten

Leonardus Henricus Marie Verstappen

Wouter Joep Engelen

Vadim Yevgenyevich Banine

Martinus Hendrikus Antonius Leenders

Richard Johannes Franciscus Van Haren

Roelof Frederik De Graaf

Paul Christiaan Hinnen

Jozef Maria Finders

Hendrik Jan Hidde Smilde

Nina Vladimirovna Dziomkina

Paulus Martinus Maria Liebregts

Martijn Houben

Johannes Anna Quaedackers

Willem Jurrianus Venema

Egbert Lenderink

Hendrikus Robertus Marie Van Greevenbroek

Reiner Maria Jungblut

Robbert Jan Voogd

Dennis De Graaf

Igor Vladimirovich Fomenkov

Everhardus Cornelis Mos

Frank Staals

Kaustuve Bhattacharyya

Johan Hendrik Klootwijk

Hans Van Der Laan

Scott Anderson Middlebrooks

Franciscus Godefridus Casper Bijnen

Theodorus Marinus Modderman

Antoine Gaston Marie Kiers

Richard Joseph Bruls

Andrei Mikhailovich Yakunin

Samir A Nayfeh

Henricus Petrus Maria Pellemans

Karel Diederick Van Der Mast

Hubertus Johannes Gertrudus Simons

Joseph Harry Lyons

Martin Ebert

Bastiaan Lambertus Wilhelmus Marinus Van De Ven

Yang-Shan Huang

Olav Waldemar Vladimir Frijns

Christopher John Mason

Johannes Christiaan Leonardus Franken

Sami Musa

Andrew David LaForge

Adrianus Johannes Maria Giesbers

Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.

Membrane for EUV lithography

Systems, apparatuses, and methods are provided for removing heat from a reticle. An example method can include generating, by a cooling controller, a cooling control signal based on timing data for a projection of a patterned radiation beam formed by illuminating an exposed area on a reticle supported by a reticle table, absorption data for the exposed area, and a target heat transfer rate. The cooling control signal can instruct a reticle cooling apparatus to actuate actuators to modify a distance between the reticle and a roof of the reticle cooling apparatus. The method can further include modifying, by the actuators based on the cooling control signal, the distance between the reticle and the roof to modify a heat transfer rate associated with a removal of heat from the reticle towards the target heat transfer rate.

Cooling hood for reticle

A method of protecting a component of a lithographic apparatus, the method including the steps of: providing a protective cover which is shaped to protect at least part of said component, the protective cover having a contact surface which is arranged to adhere to a first surface of at least part of said lithographic apparatus or said component; and bringing the protective cover into proximity with the component so as to cause the contact surface to adhere to the lithographic apparatus or said component and remain adhered without the application of external force. It is also provided a patterning device for use in a lithographic apparatus and a lithographic apparatus.

Component for use in a lithographic apparatus, method of protecting a component and method of protecting tables in a lithographic apparatus

A reticle conditioning system includes: a support structure to support a reticle; a gas supply module to provide a flow of gas adjacent to the reticle; and a biasing module to control an electrical potential of the reticle. The biasing module includes a first electrode, a second electrode and a voltage supply. The first and second electrodes are each spaced apart from and facing the reticle, when the reticle is supported by the support structure, so as to at least partially overlap with the reticle. The voltage supply is arranged to maintain the first electrode at a positive voltage, and the second electrode at a negative voltage, these voltages being such that the voltage of the reticle is negative. The second electrode is disposed such that, when the reticle is supported by the support structure, it does not overlap an image forming portion of the reticle.

Patterning device conditioning system and method

An apparatus comprising: a radiation receiving apparatus provided with an opening operable to receive radiation from a radiation source through the opening; wherein the radiation receiving apparatus comprises a deflection apparatus arranged to change a trajectory of a particle through the opening arriving at the radiation receiving apparatus.

Lithographic system provided with a deflection apparatus for changing a trajectory of particulate debris

Provided is an optical element for a lithographic apparatus. The optical element includes a capping layer that includes oxygen vacancies therein. The oxygen vacancies prevent attack of the capping layer by preventing hydrogen and other species from penetrating the capping layer and underlying layers. The capping layer provides a low hydrogen recombination rate enabling hydrogen to clean the surface of the optical element. The capping layer may include an alloyed metal, a mixed metal oxide or a doped metal oxide and it may be a ruthenium capping layer that includes one or more dopants therein.

Oxygen-loss resistant top coating for optical elements

An EUV collector mirror has a reflection surface () to reflect usable EUV light which impinges on the reflection surface () from a source region () to a subsequent EUV optics. The reflection surface () carries a pump light grating structure () configured to retroreflect pump light () which impinges upon the pump light grating structure () from the source region () back to the source region (). The pump light () has a wavelength deviating from the wavelength of the usable EUV light. Such EUV collector mirror enables a high conversion efficiency between the energy of pump light of a laser discharged produced plasma (LDPP) EUV light source on the one hand and the resulting usable EUV energy on the other.

EUV collector mirror

A first diffusor configured to receive and transmit radiation has a plurality of layers, each layer arranged to change an angular distribution of EUV radiation passing through it differently. A second diffusor configured to receive and transmit radiation has a first layer and a second layer. The first layer is formed from a first material, the first layer including a nanostructure on at least one surface of the first layer. The second layer is formed from a second material adjacent to the at least one surface of the first layer such that the second layer also includes a nanostructure. The second material has a refractive index that is different to a refractive index of the first layer. The diffusors may be configured to receive and transmit EUV radiation.

Transmissive diffusor

Apparatuses, systems, and methods for transferring fluid to a stage in a charged particle beam system are disclosed. In some embodiments, a stage may be configured to secure a wafer; a chamber may be configured to house the stage; and a tube may be provided within the chamber to transfer fluid between the stage and outside of the chamber. The tube may include a first tubular layer of first material, wherein the first material is a flexible polymer; and a second tubular layer of second material, wherein the second material is configured to reduce permeation of fluid or gas through the tube. In some embodiments, a system may include a degasser system outside of the chamber, where the degasser system may be configured to remove gases from the transfer fluid before the transfer fluid enters the tube.

Fluid transfer system in a charged particle system

An object holder configured to support an object, the object holder comprising: a core body comprising a plurality of burls having distal ends in a support plane for supporting the object; an electrostatic sheet between the burls, the electrostatic sheet comprising an electrode sandwiched between dielectric layers; and a circumferential barrier for reducing outflow of gas escaping from space between the object and the core body.

Object holder, electrostatic sheet and method for making an electrostatic sheet

Embodiments herein describe methods, devices, and systems for reducing an electric field at a clamp-reticle interface using an enhanced electrostatic clamp. In particular, the electrostatic clamp includes a clamp body, an electrode layer disposed on a top surface of the clamp body, and a plurality of burls that project from a bottom surface of the clamp body, wherein the electrode layer comprises a plurality of cutouts at predetermined locations that vertically correspond to locations of the plurality of burls at the bottom surface of the clamp body.

Lithographic apparatus and electrostatic clamp designs

A lithographic apparatus including a substrate stage for supporting a structure in a compartment, the compartment having a compartment surface facing a top surface of the substrate in at least one operational configuration; and a soft coating on the compartment surface for capturing particles. A heat shield or component thereof for a lithographic apparatus, the heat shield or component thereof including a soft coating on at least one surface for capturing particles and a lithographic apparatus including such a heat shield.

Lithographic apparatus and method with improved contaminant particle capture

A lithographic apparatus comprising: a clamping surface for supporting a substrate, wherein a property of the clamping surface is defined by at least one clamping surface parameter, and wherein the property of the clamping surface has been selected to exhibit low wear; a clamping apparatus for actuating a clamping operation between the clamping surface and the substrate, wherein the clamping operation is defined at least in part by at least one interface characteristic between the clamping surface and the substrate; and a processing station, operable to apply an adjustment to a first property of the substrate to optimize at least one interface characteristic of a particular clamping operation in dependence on the clamping surface parameter and at least one substrate surface parameter which defines a second property of the substrate.

Lithographic apparatus

A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack including: at least one membrane layer supported by a planar substrate, wherein the planar substrate has an inner region and a border region around the inner region; and a first sacrificial layer between the planar substrate and the membrane layer; selectively removing the inner region of the planar substrate such that the membrane assembly has: a membrane formed from the at least one membrane layer, and a border holding the membrane, the border having the border region of the planar substrate and the first sacrificial layer situated between the border region and the membrane layer, wherein the selectively removing the inner region of the planar substrate includes using an etchant which has a similar etch rate for the membrane layer and its oxide and a substantially different etch rate for the first sacrificial layer.

Method of manufacturing a membrane assembly

A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle comprising at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle. At least one breakage region comprises a region of the pellicle which has a reduced thickness when compared to surrounding regions of the pellicle.

Pellicle and pellicle assembly

Growing community of inventors

Helmond, Netherlands

Marcus Adrianus Van De Kerkhof