Compuware Technology Inc.

Marcos-Agoo Liquicia

Chien-Ta Liang

An active isolation switch according to this invention includes a field effect transistor (FET), a first bi-polar transistor and a second bi-polar transistor, and an emitter bias resistor. The FET is formed with a source, a gate, and a drain. The first bi-polar transistor is formed with a first emitter, a first base, and a first collector; the first emitter is connected to the source and the first collector is connected to the gate. The second bi-polar transistor is formed with a second emitter, a second base, and a second collector, the second base is connected to the first base, and the second collector is connected to the drain. The emitter bias resistor is formed with a first terminal and a second terminal; the first terminal is connected to the emitter of the second bi-polar transistor and the second terminal is connected to the emitter of the first bi-polar transistor. The first resistor is connected between a bias voltage and the first collector; the second resistor is connected between the bias voltage and the base of the second bi-polar transistor.

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Taipei, Taiwan

Marcos-Agoo Liquicia