Carl-zeiss-smt Ag

Carl Zeiss Smt Gmbh

Carl Zeiss Sms Ltd.

Marco Wedowski

Roman Klein

Frank Stietz

Hartmut Enkisch

Markus Weiss

Johann Trenkler

Fokko Pieter Wieringa

Michiel David Nijkerk

Gisela Sipos

Nadyeh Shariloo, Legal Representative

Bas M Mertens

Wilhelm Ulrich

Udo Dinger

Hans-Jürgen Mann

Stephan Muellender

Frederik Bijkerk

Wolfgang Harnisch

Andrey E Yakshin

Dieter Pauschinger

Hubert Adriaan Van Mierlo

Eric Louis

Axel Zibold

Thomas Engel

Wolfgang Reinecke

Stephan Müllender

H A Van Mierlo

In order to obtain optimal reflectivity on optical elements for the EUV and the soft X-ray range, multilayers constructed of a number of layers are used. Contamination or degradation of the surface leads to imaging defects and transmission losses. In the prior art, it has been attempted to counter a negative change in the surface by providing a cover layer system on the surface of the reflective optical element that should protect the surface. The invention renders the influence of the surface degradation manageable by a targeted selection of the distribution of thickness of the cover layer system, whereby at least one layer of the cover layer system has a gradient that is not equal to zero.

Reflective optical element, optical system EUV and lithography device

An optical element, especially a normal-incidence collector mirror, for radiation in the EUV and/or soft X-ray region of wavelengths is described. The element has a substrate, a multilayer coating with an optically active region, and a capacitor, having a first and a second capacitor electrode. At least one layer of the multilayer coating serves as the first capacitor electrode. At least one dielectric layer is provided between the two capacitor electrodes. Also described is an optical system with at least one optical element, having a first electrode arranged in the vicinity of the optical element.

Optical element for radiation in the EUV and/or soft X-ray region and an optical system with at least one optical element

Reflective optical element, optical system and EUV lithography device

There is provided a reflective X-ray microscope for examining an object in an object plane. The reflective X-ray microscope includes (a) a first subsystem, having a first mirror and a second mirror, disposed in a beam path from the object plane to the image plane, and (b) a second subsystem, having a third mirror, situated downstream of the first subsystem in the beam path. The object is illuminated with radiation having a wavelength &#x3c;100 nm, and the reflective X-ray microscope projects the object with magnification into an image plane.

Reflective X-ray microscope and inspection system for examining objects with wavelengths &#x3c;100 nm

The invention relates to a method for preventing contamination on the surfaces of optical elements comprising a multi-layer system, during the exposure thereof to radiation at signal wave lengths in an evacuated closed system comprising a residual gas atmosphere, whereby the photocurrent generated by means of photo emission from the radiated surface of the multi-layer system is measured. The photocurrent is used to regulate the gas composition of the residual gas. The gas composition is altered according to at least one lower and one upper threshold value of the photocurrent. The invention also relates to a device for regulating the contamination on the surface of at least one optical element during exposure and an EUV-lithographic device and a method for cleaning the surfaces of the optical elements contaminated by carbon.

Device, EUV lithographic device and method for preventing and cleaning contamination on optical elements

In order to reduce contamination of optical elements which comprise a multilayer system on a substrate, it is proposed that the layer material and/or the layer thickness of at least one layer of the multilayer system are/is selected such that the standing wave which forms during reflection of the irradiated operating wavelength, forms a node of the electrical field intensity (node condition) in the area of the free interface of the multilayer system. Furthermore, a method for determining a design of a multilayer system, as well as a manufacturing process and a lithography apparatus are described.

Optical element and method for its manufacture as well as lithography apparatus and method for manufacturing a semiconductor device

The invention relates to a narrow-band spectral filter. The aim of the invention is to reduce the radiation exposure of optical elements used in highly ultraviolet light by using an optical filter that is simple in construction and that preselects a wavelength band of a predetermined bandwidth. To this end, an optical filter is provided that comprises at least one zirconium, niobium, or molybdenum layer interposed between two silicon layers. In order to increase the mechanical stability and the service life of the filter and in order to further restrict the spectral characteristics, another two ruthenium or rhodium layers each can follow the silicon layers. The filters of this kind are especially used in illumination systems and projection illumination systems for highly ultraviolet light that are used in semiconductor lithography.

Narrow-band spectral filter and the use thereof

Device, EUV-lithographic device and method for preventing and cleaning contamination on optical elements

Growing community of inventors

Aalen, Germany

Marco Wedowski