Stmicroelectronics S.r.l.

Marco Sambi

Marco Morelli

Fabrizio Fausto Renzo Toia

Giuseppe Barillaro

Davide Giuseppe Patti

Riccardo Depetro

Simone Dario Mariani

Marco Marchesi

Lucanos Marsilio Strambini

Davide Ugo Ghisu

Stefano Corona

Dario Bianchi

Michele Basso

Leonardo Di Biccari

Dario Ripamonti

A technique to make silicon oxide regions from porous silicon and related semiconductor structures is disclosed. The porous silicon is made in situ by anodizing P doped silicon regions. Thus, the shape and profile of the oxide regions may be controlled by controlling the shape and profile of the P doped silicon regions.

Semiconductor structure with partially embedded insulation region and related method

A structural body made of semiconductor material includes an active area housing a drain region, a body region and a source region within the body region. An electrical-isolation trench extends in the structural body to surround the active area. A first PN-junction and a second PN-junction are integrated in the structural body between the active area and the trench, respectively located on opposite sides of the active area. The first and the second PN-junctions form a first diode and a second diode, with each diode having a respective cathode electrically coupled to the drain region of the MOSFET device and a respective anode electrically coupled to the source region of the MOSFET device.

LDMOS device with integrated P-N junction diodes

A light-emitting device may include a semiconductor body having a first conductivity type, with a front side and a back side. The light-emitting device may also include a porous-silicon region which extends in the semiconductor body at the front side, and a cathode region in direct lateral contact with the porous-silicon region. The light-emitting device may further include a barrier region of electrically insulating material, which extends in direct contact with the cathode region at the bottom side of the cathode region so that, in use, an electric current flows in the semiconductor body through lateral portions of the cathode region.

Porous-silicon light-emitting device and manufacturing method thereof

A technique to make silicon oxide regions from porous silicon and related semiconductor structures are disclosed. The porous silicon is made in situ by anodizing P doped silicon regions. Thus, the shape and profile of the oxide regions may be controlled by controlling the shape and profile of the P doped silicon regions.

Semiconductor structure with partially embedded insulation region

A process of forming integrated electronic device having a semiconductor body includes: forming a first electrode region having a first type of conductivity; forming a second electrode region having a second type of conductivity, which forms a junction with the first electrode region; and forming a nanostructured semiconductor region, which extends in one of the first and second electrode regions.

Electronic junction device with a reduced recovery time for applications subject to the current recirculation phenomenon and related manufacturing process

An integrated electronic device having a semiconductor body including: a first electrode region having a first type of conductivity; and a second electrode region having a second type of conductivity, which forms a junction with the first electrode region. The integrated electronic device further includes a nanostructured semiconductor region, which extends in one of the first and second electrode regions.

A diode comprising a semiconductor body delimited by a front surface and including: a first semiconductor region having a first type of conductivity, facing at least in part the front surface; and a second semiconductor region having a second type of conductivity, the second semiconductor region facing at least in part the front surface and surrounding, at a distance, at least part of the first semiconductor region. The diode further includes: a trench, which extends in the semiconductor body starting from the front surface, for surrounding at least part of the second semiconductor region; and a lateral insulation region, which is arranged within the trench, is formed by dielectric material and contacts at least in part the second semiconductor region.

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Cornaredo, Italy

Marco Sambi