Abb Technology Ag

Abb Schweiz Ag

Medical University of South Carolina

Marco Riva

Carlo Boffelli

Roberto Penzo

Luciano Chenet

Roberto Usai

Eric Bevilacqua

Jason D Bakos

Antonello Monti

Bo Wang

Front cover for a switching device

Switching device with front cover

Display panel or portion thereof with a transitional graphical user interface

A driver circuit and integrated circuit implementation of a driver circuit for driving a GaN HFET device is disclosed. The driver circuit includes a resonant drive circuit having an LC circuit with an inductance and a capacitance. The capacitance of the LC circuit includes the gate-source capacitance of the GaN HFET device. The driver circuit further includes a level shifter circuit configured to receive a first signal and to amplify the first signal to a second signal suitable for driving a GaN HFET device. The resonant drive circuit is controlled based at least in part on the second signal such that the resonant drive circuit provides a first voltage to the GaN HFET device to control the GaN HFET device to operate in a conducting state and to provide a second voltage to the GaN HFET device to control the GaN HFET device to operate in a non-conducting state.

Driver circuit for gallium nitride (GaN) heterojunction field effect transistors (HFETs)

Growing community of inventors

Canonica D'Adda, Italy

Marco Riva