Stmicroelectronics S.r.l.

Stmicroelectronics International N.v.

Other

Alma Mater Studiorum-Universitá Di Bologna

Sgs-Thomson Microelectronics S.r.l.

Western Digital (Fremont), Inc.

Stmicroelectronics Design and Application S.r.o.

Marco Pasotti

Pier Luigi Rolandi

Marcella Carissimi

Giovanni Guaitini

Guido De Sandre

Roberto Antonio Canegallo

Fabio De Santis

Marco Poles

Vikas Rana

Laura Capecchi

David Iezzi

Riccardo Zurla

Ernestina Chioffi

Danilo Gerna

Antonio Gnudi

Pierluigi Rolandi

Eleonora Franchi Scarselli

Davide Lena

Chantal Auricchio

Abhishek Lal

Emanuela Calvetti

Dario Livornesi

Roberto Bregoli

Frank Lhermet

Rajat Kulshrestha

Alessio Antolini

Andrea Lico

Guido Torelli

Alessandro Rocchi

Michele Borgatti

Alessandro Cabrini

Marco Bisio

Federico Pio

Roberto Gastaldi

Kyusik Sin

Roberto Bez

Matthew R Gibbons

Fabio Enrico Carlo Disegni

Hua-Ching Tong

Giulio Casagrande

Hugh Craig Hiner

Sandor Petenyi

William D Jensen

Davide Manfre′

Stefano Marchese

Fabrizio Torricelli

Vivek Tyagi

Michele Quarantelli

Zsolt Miklos Kovacs-Vajna

Davide Manfre'

Francesco Lertora

Xizeng (Stone) Shi

Abhishek Mittal

Lorenzo Cali'

Paolo Romele

Riccardo Vignali

Cedric Issartel

Flavio Giovanni Volpe

BharathManoj Manda

Giovani Guaitini

Giancarlo Pisoni

Gianbattsista Lo Giudice

Gilberto Muzzi

Paolo Cappeletti

Andrea Ambrosino

Riccardo Zurla, Jr

An in-memory computation device includes a word line activation circuit that receives an input signal indicative of input values and provides activation signals each as a function of the input value. The in-memory computation device further includes a memory array, a biasing circuit generating a bias voltage and a digital detector. The memory array has memory cells coupled to a bit line and each to a word line. Each memory cell stores a computational weight. In response to an activation signal, a cell current flows through each memory cell as a function of the bias voltage, the activation signal and the computational weight. A bit line current flows through the bit line as a function of a summation of the cell currents. The digital detector is coupled to the bit line, samples the bit line current and, in response, provides an output signal.

In-memory computation device having improved drift compensation

In embodiments, a voltage regulator has an input node to receive an input voltage and an output node. The voltage regulator has a charge pump circuit that receives a boosting control signal to boost the input voltage based on the boosting control signal. The voltage regulator further has a feedback regulation circuit configured to receive the output voltage and to provide a first operation control signal and a second operation control signal as a function of the output voltage; a phase control circuit configured to receive the first operation control signal and to provide the boosting control signal as a function of the first operation control signal; and a filter coupled to the output node, configured to receive the second operation control signal and configured to inject to or sink from the output node a charge that is a function of the second operation control signal.

Voltage regulator comprising a charge pump circuit

A voltage regulator receives a reference voltage and generates a regulated voltage using a MOSFET having a gate terminal configured to receive a control voltage. A charge pump receives the regulated voltage and generates a charge pump voltage in response to an enable signal and a clock signal generated in response to the enable signal. The voltage regulator further includes a first switched capacitor circuit coupled to the gate terminal and configured to selectively charge a first capacitor with a first current and impose a first voltage drop on the control voltage in response to assertion of the enable signal. The voltage regulator also includes a second switched capacitor circuit coupled to the gate terminal and configured to selectively charge a second capacitor with a second current and impose a second voltage drop on the control voltage in response to one logic state of the clock signal.

Voltage regulator circuit for a switching circuit load

An in-memory computation circuit includes a memory array with memory cells arranged in a matrix in rows and columns. Groups of memory cells store computational weights for an in-memory compute (IMC) operation that is performed with a first multiply and accumulate (MAC) elaboration to produce a first analog signal and a second MAC elaboration to produce a second analog signal. An analog-to-digital converter circuit operates to: increment a count value in a counter circuit in response to the first analog signal; convert the count value in the counter circuit to a negated count value; and increment the count value in the counter circuit starting from the negated count value in response to the second analog signal.

In-memory computation system with built-in subtraction mode for handling matrix vector multiplication of signed feature data and signed computational weight data

An in-memory computation (IMC) circuit includes a memory array formed by memory cells arranged in row-by-column matrix. Computational weights for an IMC operation are stored in the memory cells. Each column includes a bit line connected to the memory cells. A switching circuit is connected between each bit line and a corresponding column output. The switching circuit is controlled to turn on to generate the analog signal dependent on the computational weight and for a time duration controlled by the coefficient data signal. A column combining circuit combines (by addition and/or subtraction) and integrates analog signals at the column outputs of the biasing circuits. The addition/subtraction is dependent on one or more a sign of the coefficient data and a sign of the computational weight and may further implement a binary weighting function.

Signed and binary weighted computation for an in-memory computation system

A circuit includes a memory array with memory cells arranged in a matrix of rows and columns, where each row includes a word line connected to the memory cells of the row, and each column includes a bit line connected to the memory cells of the column. Computational weights for an in-memory compute operation (IMCO) are stored in the memory cells. A word line control circuit simultaneously actuates word lines in response to input signals providing coefficient data for the IMCO by applying word line signal pulses. A column processing circuit connected to the bit lines processes analog signals developed on the bit lines in response to the simultaneous actuation of the word lines to generate multiply and accumulate output signals for the IMCO. Pulse widths of the signal pulses are modulated to compensate for cell drift. The IMCO further handles positive/negative calculation for the coefficient data and computational weights.

In-memory computation system with drift compensation circuit

An in-memory computation (IMC) circuit includes a memory array formed by memory cells arranged in row-by-column matrix. Computational weights for an IMC operation are stored in the memory cells. Each column includes a bit line connected to the memory cells. A biasing circuit is connected between each bit line and a corresponding column output. A column combining circuit combines and integrates analog signals at the column outputs of the biasing circuits. Each biasing circuit operates to apply a fixed reference voltage level to its bit line. Each biasing circuit further includes a switching circuit that is controlled to turn on for a time duration controlled by asps comparison of a coefficient data signal to a ramp signal to generate the analog signal dependent on the computational weight. The ramp signal is generated using a reference current derived from a reference memory cell.

Compensated analog computation for an in-memory computation system

A voltage supply circuit and a method for controlling a voltage supply circuit are provided. The voltage supply circuit includes a positive charge pump stage that generates a positive voltage and a negative charge pump stage that generates a negative voltage. The voltage supply circuit also includes a control stage that compares a voltage representative of the negative voltage with a reference voltage and causes a slope of the positive voltage to decrease when the voltage representative of the negative voltage exceeds the reference voltage.

Positive and negative charge pump control

An embodiment memory device comprises a plurality of memory cells, each exhibiting a transconductance depending on a value of a stored bit, a plurality of bit lines associated with respective groups of memory cells, each bit line configured to flow a respective electric current indicative of the bit stored in a selected memory cell of the respective group of memory cells, and a computing circuit providing an output electric quantity indicative of a linear combination of a plurality of input electric quantities. The computing circuit comprises a biasing stage configured to bias each bit line with a respective input electric quantity, the electric current flowing through each bit line based on a product of the respective input electric quantity and the transconductance of the selected memory cell, and a combining stage for combining the electric currents flowing through the plurality of bit lines thereby obtaining the output electric quantity.

Memory device and method for in-memory computing

A system and method for operating a memory cell is provided. A non-volatile memory storage device includes an array of memory cells of differential or single-ended type. In an embodiment, a regulator is coupled to a sense amplifier. The regulator is configured to generate a voltage to gate terminals of one or two transistors of the sense amplifier. In the differential type, the voltage is generated such that the first bias current and the second bias current have a current value equal to the sum of a maximum current flowing in a memory cell being in a RESET state and a fixed current. In the single-ended type, the regulated voltage is generated such that the first bias current and the second bias current have a current value equal to the sum of a fixed current and the reference current generated by the reference current source across temperature.

Regulator of a sense amplifier

An integrated circuit includes a memory array and a read voltage regulator that generates read voltages from the memory array. The read voltage regulator includes a replica memory cell and the replica bitline current path. The replica memory cell is a replica of memory cells of the memory array. The replica bitline current path is a replica of current paths associated with deadlines of the memory array. The read voltage regulator generates a read voltage based on the current passed through the replica bitline current path. This read voltage is then supplied to the wordlines of the memory array during a read operation.

Circuit and method for process and temperature compensated read voltage for non-volatile memory

A non-volatile memory device includes a memory array, a reading circuit, a column decoder stage, and a read supply voltage generator. The column decoder stage includes selectable bitlines and selection switches. A read supply voltage generator includes a voltage regulation circuit and a dummy column decoder coupled to an output of the voltage regulation circuit and having electrical characteristics correlated to the selected read path. The voltage regulation circuit is configured to receive a first electrical quantity correlated to a desired voltage value on the selected bitline and a second electrical quantity correlated to a desired current value for the selected bitline and to generate a regulated read supply voltage for the column decoder stage.

Non-volatile memory device having a reading circuit operating at low voltage

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Travaco' Siccomario, Italy

Marco Pasotti