Technische Unversität Berlin

Ihp Gmbh-innovations for High Performance Microelectronics/leibniz-institut Fur Innovative Mikroelektronik

Ihp Gmbh-Innovations For High Performance Microelectronics/leibniz-Instit. Für Innovativeihp Gmbh-Innovations For High Performance Microelectronics/leibniz-Instit. Für Innovative

Marco Lisker

Dirk Wolansky

Steffen Marschmeyer

Mehmet Kaynak

Christian Boit

Philip Kulse

Norbert Herfurth

Jean-Pierre Seifert

Matthias Wietstruck

Elham Amini

A semiconductor device, a method of operating the semiconductor device, and a method of fabricating the semiconductor device are disclosed. The semiconductor device comprises a substrate stack comprising two permanently bonded semiconductor bodies stacked in a depth direction that points perpendicularly from a front side towards a back side of the substrate stack, and which share a buried bonding interface. One of the semiconductor bodies, the protection body, comprises an active region with a light emitter at the buried bonding interface, and a light absorption region which is opaque for light emitted from the light emitter. Another of the semiconductor bodies, the circuit body, extends from the buried bonding interface to the front side, is transmissive for the light emitted from the light emitter, and comprises a light detector at the front side to provide a detector signal indicative of a detected light intensity of light emitted from the light emitter and transmitted through the circuit body. A driver unit of the semiconductor device is configured to drive operation of the light emitters using predetermined operation parameters.

Semiconductor device with back side protection mechanism

Method for producing a semiconductor device by providing a silicon wafer having a plurality of equal height raised portions on a first surface thereof; depositing an etch stop layer on the first surface; planarizing a surface of the etch stop layer; permanently bonding a first carrier wafer on the etch stop layer surface; producing components on or in a second wafer surface in a FEOL process; etching a plurality of trenches into the wafer, each trench formed at the respective location of one of the raised portions; depositing side wall insulation layers on side walls of the trenches; forming through-silicon vias by filling the trenches with electrically conductive material; producing a conductor path stack in a BEOL process for contacting the active components on the second surface; temporarily bonding a second carrier wafer onto a surface of the conductor path stack; removing the first carrier wafer and exposing the vias.

Technological method for preventing, by means of buried etch stop layers, the creation of vertical/lateral inhomogeneities when etching through-silicon vias

Growing community of inventors

Frankfurt-am-Main, Germany

Marco Lisker