Sgs-thomson Microelectronics S.r.l.

Stmicroelectronics S.r.l.

Micron Technology Incorporated

Other

Industrie Pirelli S.p.a.

Stmelectronics S.r.l.

Marco Giovanni Fontana

Luigi Pascucci

Antonio Barcella

Paolo Rolandi

Massimo Montanaro

Francesco Pulvirenti

Giuseppe Cantone

Mauro Pagliato

Marco Riva

Anthony R Cabrera

Giovanni Bolognini

Gerald A Kreifels

Giuseppe Sciascia

Giorgio Oddone

Carmelo Paolino

Bruno Borca

Davide Bitonti

Chiara De Berti

Marco Spinelli

A circuit comprises first and second input supply nodes configured to receive a supply voltage therebetween. The circuit comprises a high-side driver circuit configured to be coupled to a high-side switch and produce a first signal between first and second high-side output nodes. The circuit comprises a low-side driver circuit configured to be coupled to a low-side switch and produce a second signal between first and second low-side output nodes. The circuit comprises a floating node configured to receive a floating voltage applied between the floating node and the second high-side output node, a bootstrap diode between the first input supply node and an intermediate node, and a current limiter circuit between the intermediate node and the floating node and configured to sense the floating voltage and counter a current flow from the intermediate node to the floating node as a result of the floating voltage reaching a threshold value.

Driver circuit, corresponding device and method of operation

Systems and methods for intra-sector re-ordered wear leveling include: detecting, in a memory device, a high wear sub-sector having a high wear level, the sub-sector residing in a first sector; determining a second sector of the memory device having a low wear level; swapping the first sector with the second sector; and re-ordering a position of at least one sub-sector of the first sector, the second sector, or both.

Memory wear leveling

Methods of wear leveling in a memory, and memories configured to perform such methods, are useful in extending cycling endurance in memories. Such methods include transferring data from a first block of the memory to a second block of the memory, erasing the first block, transferring data from a third block of the memory to the first block, erasing the third block, transferring data from the second block to the third block, swapping logical addresses for the first block and the third block with each other, and erasing the second block. Transferring data from the third block to the first block excludes a sub-sector of the third block that is to be erased.

Sub-sector wear leveling in memories

Decoding blocks, memories, and methods for decoding pre-decoded address information are disclosed. One such decoding block includes a first latch and voltage shift circuit configured to receive first pre-decoded address information at first voltage levels and further configured to latch the first pre-decoded address information and shift the voltage levels of the same to second voltage levels. An address decoder includes a second latch and voltage shift circuit configured to receive second pre-decoded address information at the first voltage levels and latch and shift the voltage levels of the same to the second voltage levels. The address decoder is further configured to select control gates of the memory cells of the memory based at least in part on the first and second pre-decoded address information.

Row address decoding block for non-volatile memories and methods for decoding pre-decoded address information

Methods and memories for wear leveling by sub-sectors of a block are provided. In one such method, data are transferred from a first block of the memory to a second block of the memory, excluding a sub-sector of the first block that is to be erased, logical addresses for the first block and the second block are swapped with each other, the first block is erased, data are transferred from a third block to the first block, logical addresses for the first block and the third block are swapped with each other, and the third block is erased.

A high voltage generator of the DAC-controlled type, has an input terminal connected to a first voltage reference and an output terminal providing an output voltage and comprises at least a voltage control circuit and a charge pump circuit inserted, in series to each other, between the input and output terminals of the high voltage generator, and an output regulator connected to the output terminal of the high voltage generator and comprising at least a digital-to-analog converter or DAC. The output regulator further comprises at least an additional current regulation portion connected to the output terminal of the high voltage generator through a first resistive element of the output regulator as well to an enabling terminal which provides an enabling signal, the additional current regulation portion being supplied by a second voltage reference having a voltage level higher than a voltage level of the first voltage reference.

High voltage generator of the DAC-controlled type

The voltage applied to the gate terminals of the charging transistors and charge-transfer transistors of two parallel pumping branches forming a charge pump is a boosted voltage generated internally and supplied in a crosswise manner. In particular, for driving the charge pump, first and second driving signals are generated respectively for the first and for the second pumping branch via a first and respectively a second driving circuit; the first and second driving signals are also supplied respectively to a first and to a second auxiliary charge pump to obtain respectively first and second voltage-boosted signals; and the first and second boosted voltages are respectively supplied to the second and to the first driving circuit.

High-efficiency power charge pump supplying high DC output currents

A method for reading a memory by applying control signals. The control signals include a memory enable signal, a visibility signal, and a read signal. By applying the control signals to the memory, the memory is selectively configured into any of a plurality of cycles associated with reading the memory. The different cycles include: random read, pipeline-type random read, sequential read and suspend and wait cycles. Depending upon the cycle configuration of the memory, data is selectively emitted from the memory that coincides with the externally generated address.

Method and system for reading a memory by applying control signals thereto

A non-volatile memory device that comprises an internal bus for the transmission of data and other information of the memory to output pads; a timer; and an enabling/disabling circuit for enabling and disabling access to the internal bus; the timer controlling the internal bus to transmit information signals of the memory device that originate from local auxiliary lines over the internal bus when the bus is in an inactive period during a normal memory data reading cycle; the timer controlling the enabling/disabling means to allow/deny access to the internal bus on the part of the information signals or of the data from or to the memory.

Timesharing internal bus, particularly for non-volatile memories

A voltage regulator for programming electrically programmable non-volatile memory cells in a cell matrix that is divided in segments. The voltage regulator includes an amplifier stage connected and powered between a first reference voltage and a second reference voltage and having a first input terminal connected to a voltage divider of the first reference voltage, an output terminal connected to the control terminal of a MOS transistor which has a conduction terminal connected to the memory cells through a programming line, and a second input terminal connected to the programming line, and connected to the output terminal in a feedback loop. The voltage regulator includes an input circuit portion made up of active elements and inserted in turn between the first and second reference voltages. The input circuit portion connects the amplifier to the first reference voltage in response to at least one pair of signals to activate the voltage regulator only when there is at least one cell to be programmed in the segment that is associated with the regulator.

Voltage regulator for programming electrically programmable non-volatile memory cells in a cell matrix

Programming and reading management architecture, particularly for test purposes, for memory devices of the non-volatile type, comprising at least two memory half-matrices, a bidirectional internal bus for the transmission of data to and from the memory half-matrices, a programming unit for each one of the at least two memory half-matrices, and a data sensing unit. The programming units are adapted to program the at least two memory half-matrices and the data sensing unit and the programming units communicate with the bidirectional internal bus to reroute onto the bus reading data and programming data of the at least two memory half-matrices.

Memory under test programming and reading device

The method comprises the steps of detecting the trailing edge of an initialization signal, and generating a read bias signal and a read activation signal for the cell, when the trailing edge of the initialization signal is detected. The signals of read bias and read activation have a ramp-like leading edge and both signals are disabled when reading of the cell is completed. Thereby, phenomena of soft-writing of the cell are avoided, and risks of erroneous readings are reduced.

Method and device for reading a non-erasable memory cell

A method and circuit to trim the internal timing conditions for a semiconductor memory device including a memory matrix and circuit portions for allowing reading of the data stored in the memory matrix wherein such circuit portions include an ATD generator detecting each transition of a plurality of address terminals of the memory device to produce an ATD synchronization signal, a sense amplifier which receives an equalization a signal EQU from a generator activated by the ATD signal, and output buffers enabled by an OUTLATCH signal produced by a generator receiving the ATD signal and the EQU signal. The length of the signals is automatically trimmed according to a corresponding length code contained in a portion of the memory device.

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Milan, Italy

Marco Giovanni Fontana