Asml Netherlands B.v.

Carl Zeiss Smt Gmbh

Marco G H Meijerink

Johannes Hubertus Josephina Moors

Michel Riepen

Dirk Heinrich Ehm

Bastiaan Theodoor Wolschrijn

Norbertus Benedictus Koster

Thomas Stein

Michiel Nienoord

Arnoldus Jan Storm

Annemieke Van De Runstraat

A G Ton M Bastein

Esther L J Van Soest-Vercammen

Frits G H M Gubbels

Peter J Oprel

An optical arrangement, in particular a projection system, illumination system or beam shaping system for EUV lithography, including at least one optical element that is arranged in a beam path of the optical arrangement and that reflects radiation in the soft X-ray- or EUV wavelength range, wherein at least during operation of the optical arrangement at least one of, preferably each of, the reflective optical elements in the beam path, at least at the optical surface, has an operating temperature of approximately 30&#xb0; C. or more, preferably of approximately 100&#xb0; C. or more, particularly preferably of approximately 150&#xb0; C. or more, and even more preferably of approximately 250&#xb0; C. or more, and wherein the optical design of the at least one reflective optical element is selected such that its optical characteristics are optimised for operation at the operating temperature. Also presented is a method for providing a reflective optical element with such an optical design.

Optical arrangement and EUV lithography device with at least one heated optical element, operating methods, and methods for cleaning as well as for providing an optical element

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The Hague, Netherlands

Marco G H Meijerink