Globalwafers Co., Ltd.

Marco D'Angella

Stephan Haringer

Mauro Diodà

Roberto Scala

Hariprasad Sreedharamurthy

A method of growing a doped monocrystalline ingot using a crystal growing system is provided. The crystal growing system includes a growth chamber, a dopant feeding device, and a feed tube. The method includes preparing a melt of semiconductor or solar-grade material in a crucible disposed within the growth chamber, introducing a solid dopant into the feed tube with the dopant feeding device, melting the solid dopant within the feed tube to a form a liquid dopant, introducing the liquid dopant into the melt below a surface of the melt, and growing a monocrystalline ingot from the melt by contacting the melt with a seed crystal and pulling the seed crystal away from the melt.

System for introducing dopant into a melt of semiconductor or solar-grade material via a feed tube

A crystal pulling apparatus for producing an ingot is provided. The apparatus includes a furnace and a gas doping system. The furnace includes a crucible for holding a melt. The gas doping system includes a feeding tube, an evaporation receptacle, and a fluid flow restrictor. The feeding tube is positioned within the furnace, and includes at least one feeding tube sidewall, a first end through which a solid dopant is introduced into the feeding tube, and an opening opposite the first end through which a gaseous dopant is introduced into the furnace. The evaporation receptacle is configured to vaporize the dopant therein, and is disposed near the opening of the feeding tube. The fluid flow restrictor is configured to permit the passage of solid dopant therethrough and restrict the flow of gaseous dopant therethrough, and is disposed within the feeding tube between the first end and the evaporation receptacle.

Gas doping systems for controlled doping of a melt of semiconductor or solar-grade material

Methods of introducing dopant into a melt of semiconductor or solar-grade material via a feed tube

Methods for controlled doping of a melt including introducing liquid dopant below a surface of the melt

A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a housing defining a growth chamber, a crucible disposed within the growth chamber containing the melt of semiconductor or solar-grade material, a vacuum pump for drawing exhaust gases out of the growth chamber, and a fluid-cooled exhaust tube connected between the growth chamber and the vacuum pump.

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Merano, Italy

Marco D'Angella