Instytut Wysokich Cisnien Polskiej Akademii Nauk

Uniwersytet Warszawski

Marcin Siekacz

Tadeusz Suski

Sylwester Porowski

Izabella Grzegory

Piotr Perlin

Michal Leszczyński

Czeslaw Skierbiszewski

Michal Boćkowski

Przemyslaw Wiśniewski

Anna Feduniewicz-Zmuda

Mateusz Hajdel

Mikolaj Chlipala

Pawel Wolny

Kacper Oreszczuk

Julia Slawinska

Piotr Kossacki

Aleksander Rodek

Krzesimir Szkudlarek

The laser diode comprising crystalline substrate () where set of subsequent n-type layers, set of optically active layers () and set of p-type layers is deposited. The set of n-type layers comprise at least one buffer layer (), bottom n-type cladding layer () and n-type bottom waveguide layer. The set of p-type layers comprise at least p-type upper waveguide, which comprises electron blocking layer, upper p-type cladding layer () and p-type contact layer (). The electron blocking layer comprises In, AlGa, N alloy doped with magnesium where 1&#x2267;x&#x3e;0.001 a 1&#x2267;y 0. The way of making this invention is based on the epitaxial deposition of subsequent set of the n-type layers (), set of optically active layers () and set of p-type layers () where the p-type waveguide layer () and p-type contact layer () is deposited with presence of indium in plasma assisted molecular beam epitaxy method.

Nitride based laser diode and method of manufacturing nitride based laser diode

Growing community of inventors

Turek, Poland

Marcin Siekacz